Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yodgorova Dilbara"'
Autor:
Bebitov Rakhim, Abdulkhaev Oybek, Yodgorova Dilbara, Istamov Damir, Khamdamov Giyos, Kuliyev Shukurullo, Abdullaev J. Sh., Khakimov Alim, Rakhmatov Akhmad
Publikováno v:
E3S Web of Conferences, Vol 401, p 03062 (2023)
In p-n-junction temperature sensors connected in the forwardbiased, the temperature dependence of the built-in potential is important, while in the reverse biased p-n-junction temperature sensors, it is necessary to study the temperature dependence o
Externí odkaz:
https://doaj.org/article/f3a738f3566c4ce9bb1d5993d8eba995
Autor:
Zakirov Ruslan, Abdulhaev Oybek, Khakimov Alim, Rahmatov Ahmad, Yodgorova Dilbara, Kuliev Shukur, Istamov Damir
Publikováno v:
E3S Web of Conferences, Vol 401, p 04054 (2023)
To solve the problems of medical diagnostics, human body temperature measurement has become widespread. In many cases, to make a correct diagnosis, it is required to obtain results of continuous monitoring during a certain period instead of a single
Externí odkaz:
https://doaj.org/article/ee6f9fe61ba14fff8803128ccbf41e08
Autor:
Rakhmatov, Akhmad Z., Petrov, Dmitriy Aleksandrovich, Karimov, Abdulaziz V., Yodgorova, Dilbara M., Abdulkhaev, Oybek Abdullazizovich
Publikováno v:
Radioelectronics and Communications Systems; Том 55, № 7 (2012); 332-334
Experimental study of silicon voltage limiters’ breakdown voltage dependence on neutron radiation was conducted. It revealed that with increase of radiation density from 0.1×1014 to 2×1015 N/cm2 the breakdown voltage monotonously increases: the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::69986d803525c585cfb757e79b342ddf
http://radioelektronika.org/article/view/S0735272712070060
http://radioelektronika.org/article/view/S0735272712070060
Autor:
Yodgorova, Dilbara M.
Publikováno v:
Radioelectronics and Communications Systems; Том 51, № 10 (2008); 552-554
This paper deals with researches of output characteristics of a field-controlled phototransistor with light excitation in a light-activated mode. Optical signal transformation mechanisms in a channel are determined, considering processes in a drain-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::e7d44e3310af43060018130a659e4b66
http://radioelektronika.org/article/view/S0735272708100087
http://radioelektronika.org/article/view/S0735272708100087
Autor:
Yodgorova, Dilbara M.
Publikováno v:
Radioelectronics and Communications Systems; Том 51, № 5 (2008); 280-283
This paper deals with researches of phototransistor based on gallium arsenide with tin-doped channel. It is experimentally shown, that in contrast to usual phototransistors with tellurium-doped channels, gate photocurrents are constant, i.e. independ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::8a03fe90205585770c65d8afe06a0a05
http://radioelektronika.org/article/view/S0735272708050087
http://radioelektronika.org/article/view/S0735272708050087
Publikováno v:
Radioelectronics and Communications Systems; Том 49, № 2 (2006); 55-58
A new photodiode based on pAlInGaAs–nGaAs–m-junctions is suggested. High photosensitivity in the diode is attained in the conditions of forward bias of the p-n-heterojunction and cut-off of the n-m-junction. Under such conditions, illumination of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::73db3b6118b42c00504a550a53213c3a
http://radioelektronika.org/article/view/S0735272706020117
http://radioelektronika.org/article/view/S0735272706020117