Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Yodgorova D. M."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 21-27 (2018)
The work is devoted to the study of physical features of electronic processes taking place in the space charge region and in the base region of arsenide-gallium three-barrier photodiode structures with the effect of locking two adjacent transitions.
Externí odkaz:
https://doaj.org/article/abdb3beb06694f3381215d0d7ffbb884
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 24-27 (2015)
In recent years, transmission and reception systems of optical signals are widely used. Receiving the optical signal in such systems is carried by photoreceiving modules based on a photodetector, which defines the quality of the received signal, the
Externí odkaz:
https://doaj.org/article/4a0357e945d2451b8a0c2d108d28da3f
Autor:
Karimov A. V., Yodgorova D. M., Giyasova F. A., Mirdzhalilova M. A., Asanova G. O., Abdulkhaev O. A., Mukhutdinov Zh. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 9-12 (2013)
The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the developmen
Externí odkaz:
https://doaj.org/article/103018d674534b1f820096439d633420
Autor:
Karimov A. V., Yodgorova D. M., Rakhmatov A. Z., Skornyakov S. L., Petrov D. A., Abdulkhayev O. A.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 26-30 (2012)
A new method for measuring the voltage limit is offered. It has been designed to measure high-power pulsed current of voltage limiters. The error of this method is half as much as the error of the known method of direct measurement. The investigation
Externí odkaz:
https://doaj.org/article/50f43303be6941ebae6ee7170518ea84
Autor:
Rakhmatov A. Z., Skorniakov S. L., Karimov A. V., Yodgorova D. M., Abdulkhayev O. A., Buzrukov U. M.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 30-35 (2010)
It is shown that by arsenic diffusion alloying of silicon plates in conditions of deaerated quartz ampoule the most effective is the use of a compound source in the form of crystal arsenic and silicon powder of boron-implanted silicon grade with base
Externí odkaz:
https://doaj.org/article/59dc5affc821407593664dfaaf7ea21c
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 31-34 (2009)
The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junct
Externí odkaz:
https://doaj.org/article/6a909c7e8f514fcf82376d77296d13c5
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 38-41 (2009)
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by cha
Externí odkaz:
https://doaj.org/article/a39211cc2f494b9d86634ce00e2e2a78
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 52-58 (2009)
There have been researched how the consistently connected potential barriers influence on physical processes running in p–n-heterojunction on an example of one- and multibarrier structures. It is shown, that updating of the heterojunction by creati
Externí odkaz:
https://doaj.org/article/48b20ffc166d4a20aca2fea8fa4a3824
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 28-31 (2009)
It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part
Externí odkaz:
https://doaj.org/article/03e6d011db0d41ae8c08bad593145e6c
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 46-49 (2008)
The photo-electric characteristics created two-side-sensitive two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure in photodiode and photovoltaic modes are investigated at influence by radiation from own area of absorption of base ar
Externí odkaz:
https://doaj.org/article/3860a8c37af14f4bb627f08e1b58fde7