Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yoann Tomczak"'
Autor:
Amelia Turnquist, Naoyuki Kofuji, Joseph Sebastian, Zecheng Liu, Hiroshi Kou, Hideaki Fukuda, Yoann Tomczak, Yiting Sun, Daniele Piumi, David De Roest
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79cf7a42292c6b3e11663f164da1caba
https://doi.org/10.1117/12.2661307
https://doi.org/10.1117/12.2661307
Publikováno v:
The Journal of Physical Chemistry C. 124:7163-7173
Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for catalysts and nanoelectronic devices. However, industrial applications are limited as highly selective ASD proces...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0a92825aabee40e72817ddbdd293a06
https://doi.org/10.1021/acs.jpcc.9b11270
https://doi.org/10.1021/acs.jpcc.9b11270
Anisotropic growth of two-dimensional (2D) tungsten disulfide (WS2) crystals occurs during atomic layer deposition (ALD) from WS2 seeds at predetermined locations on large area dielectric substrates. The number of ALD reaction cycles determines the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5187f4037fe2618f06042907588910d
https://lirias.kuleuven.be/handle/123456789/665853
https://lirias.kuleuven.be/handle/123456789/665853
Autor:
Boon Teik Chan, Efrain Altamirano Sanchez, Annelies Delabie, Gregory N. Parsons, Eric Stevens, Yoann Tomczak
Publikováno v:
Chemistry of Materials. 30:3223-3232
The demand for transistors and memory devices with smaller feature sizes and increasingly complex architectures furthers the need for advanced thin film patterning techniques. A prepatterned, sacrificial layer can be used as a template for bottom-up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50f91dc28dd0e218f94ce80abcb2c8d
https://doi.org/10.1021/acs.chemmater.8b00017
https://doi.org/10.1021/acs.chemmater.8b00017
Autor:
Nicola Kissoon, Moyra Mc Manus, Ming Mao, Guido Schiffelers, David De Roest, Paulina Rincon Delgadillo, Abhinav Pathak, Victor Blanco, Etienne de Poortere, Daniele Piumi, Eric Hendrickx, Danilo De Simone, Gijsbert Rispens, Pieter Vanelderen, Yoann Tomczak, Frederic Lazzarino, Geert Vandenberghe
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Enhanced EUV lithography (EUVL) resist performance, combined with optimized post processing techniques, are vital to ensure continued scaling and meet the requirements for the industry N5 node and beyond. Sequential infiltration synthesis (SIS) is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80208d1dbffca3c54e42ffcf09558796
https://doi.org/10.1117/12.2515503
https://doi.org/10.1117/12.2515503
Autor:
Sven Van Elshocht, Esteban A. Marques, J. Ruud van Ommen, Fabio Grillo, Job Soethoudt, Yoann Tomczak, Annelies Delabie, Laura Nyns
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Understanding the growth mechanisms during the early stages of atomic layer deposition (ALD) is of interest for several applications including thin film deposition, catalysis, and area-selective depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f64ca7688ecfda90192a6f4f8757b3c6
https://lirias.kuleuven.be/handle/123456789/644998
https://lirias.kuleuven.be/handle/123456789/644998
Autor:
Sofie Mertens, T. Lin, Geoffrey Pourtois, Laurent Souriau, Yoann Tomczak, Johan Swerts, Kiroubanand Sankaran, Arnaud Furnemont, Sven Van Elshocht, Woojin Kim, Sebastien Couet, Diana Tsvetanova, Enlong Liu, Gouri Sankar Kar
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Spin-transfer torque magnetic random access memory (STT-MRAM) is currently explored to challenge the dynamic random access memory and embedded memory applications. Perpendicular magnetic tunnel junction (p-MTJ) stacks used in the STT-MRAM must be com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c1debbaaf8b1d010db5985e8f9c173
https://doi.org/10.1109/tmag.2016.2515109
https://doi.org/10.1109/tmag.2016.2515109
Autor:
Diana Tsvetanova, G. L. Donadio, T. Lin, Sebastien Couet, D. Crotti, Siddharth Rao, Yoann Tomczak, Laurent Souriau, Gouri Sankar Kar, Kiroubanand Sankaran, Johan Swerts, Simon Van Beek, Ludovic Goux, Woojin Kim, Arnaud Furnemont
Publikováno v:
IEEE Transactions on Magnetics. 52:1-4
Low write error rate (WER) is an important requirement for spin-transfer torque magnetic random access memory to be developed as a product. However, there have been reports about back-hopping phenomena that disturb achieving low WER. We demonstrate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a11c447fbabe4e5957767d756642910
https://doi.org/10.1109/tmag.2016.2536158
https://doi.org/10.1109/tmag.2016.2536158
Autor:
Yoann Tomczak, Enlong Liu, Arnaud Furnemont, T. Lin, Bastien Douhard, Johan Swerts, Sven Van Elshocht, Gouri Sankar Kar, Sebastien Couet, Sofie Mertens
Publikováno v:
IEEE Magnetics Letters. 7:1-4
Magnetic random-access memory (MRAM) stacks with perpendicular magnetic anisotropy (PMA) based on spin-transfer torque (STT) are expected to be used in the next generation of high speed, low power, memory applications. As device dimensions are scaled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83add132863af74dbb978c1384f98be
https://doi.org/10.1109/lmag.2016.2545638
https://doi.org/10.1109/lmag.2016.2545638
Autor:
Manish Banerjee, Marco Gavagnin, Yoann Tomczak, Heinz D. Wanzenboeck, Timothee Blanquart, Mikko Ritala, Esa Puukilainen, Anjana Devi, Wilhelmus M. M. Kessels, Susanne Hoffmann-Eifert, Nabeel Aslam, Markku Leskelä, Jaakko Niinistö, V Valentino Longo
Publikováno v:
Chemistry of Materials. 25:3088-3095
[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa528eac760013054b6bdef8fc6afc5
https://doi.org/10.1021/cm401279v
https://doi.org/10.1021/cm401279v