Bias-Induced Healing of $V_{\text {min}}$ Failures in Advanced SRAM Arrays

Autor: Yoann Mamy Randriamihaja, C. Weintraub, Sheng Xie, Akhilesh Gautam, Yuncheng Song, B. Parameshwaran, William McMahon, Randy W. Mann, Joseph Versaggi, Ajay Anand Kallianpur

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:660-669

A novel bias-induced healing of address specific failing bits in VLSI SRAM functional arrays is demonstrated for the first time in advanced CMOS nodes. Aging effects due to bias temperature instability (BTI) resulting in device shifts are a well-know

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::220978529010688277eaafbb52eb2f09
https://doi.org/10.1109/tvlsi.2016.2598160

From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation

Autor: T. Nigam, N. Pimparkar, Balaji Vaidyanathan, William McMahon, Yoann Mamy-Randriamihaja

Publikováno v: Hot Carrier Degradation in Semiconductor Devices ISBN: 9783319089935

The increase in CMOS hot carrier lifetime due to Deuterium anneals motivates a straightforward physical picture for hot carrier degradation. The various possible isotope effects provide context for a discussion of some qualitative aspects of the phys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1834ed1b1f8913d7a9588594618a2f20
https://doi.org/10.1007/978-3-319-08994-2_1

Microscopic scale characterization and modeling of transistor degradation under HC stress

Autor: Xavier Federspiel, Denis Rideau, Pierpaolo Palestri, David Roy, Alban Zaka, Vincent Huard, Yoann Mamy Randriamihaja, Alain Bravaix

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, 2012, Microelectronics Reliability, 52 (11), pp.2513-2520. ⟨10.1016/j.microrel.2012.04.005⟩

International audience; This paper presents a theoretical framework about interface states creation rate from SiAH bond breaking at the Si/SiO2 interface during Hot Carrier (HC) stress. It involves two mains mechanisms of bond breaking through incide

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e16e0f0abe864742cdad23c380b61877
https://hal.science/hal-03654718

Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model

Autor: Erwan Dornel, F. Clark William, Yusuf Leblebici, Vincent Huard, Yoann Mamy Randriamihaja, Herve Jaouen, Davide Garetto, Alexandre Schmid, Denis Rideau

Publikováno v: 2010 14th International Workshop on Computational Electronics.

Defects in MOSFET oxides are a major issue in CMOS technologies, affecting not only the device electrical performances but also compromising reliability and endurance. Using Charge-Pumping and C-V measurements, defects have been characterized in nati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ff4a436a31dce30fe32217417723958
https://doi.org/10.1109/iwce.2010.5677950

Comparing defect characterization techniques with non-radiative multiphonon charge trapping model AC analysis, trap-assisted-tunneling and charge pumping

Autor: Herve Jaouen, Alexandre Schmid, Davide Garetto, Denis Rideau, Yoann Mamy Randriamihaja

The advantages and drawbacks of Capacitance vs Voltage (CV) characteristics, trap-assisted gate leakage tunneling and multi-frequency charge pumping techniques, have been brought out through an attentive investigation of oxide defects in CMOS technol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82b47c6d48e15d2c11343e614bae75fa
https://infoscience.epfl.ch/record/184362