Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yoann Lechaux"'
Autor:
Yoann Lechaux, Yu Chen, Albert Minj, Florencio Sánchez, Gervasi Herranz, Laurence Méchin, Bruno Guillet
Publikováno v:
Applied Physics Letters. 121:081904
In this work, we study the electronic properties of defects in the LaAlO3/SrTiO3 heterostructure, which is known to host a high mobility two-dimensional electron gas (2DEG) at the interface. This 2DEG also shows photoconductance, which could be relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e838a0f4c2f597676c2fc96a775f56f1
https://doi.org/10.1063/5.0101255
https://doi.org/10.1063/5.0101255
Autor:
Yu, Chen, Yoann, Lechaux, Blai, Casals, Bruno, Guillet, Albert, Minj, Jaume, Gázquez, Laurence, Méchin, Gervasi, Herranz
Publikováno v:
Physical review letters. 124(24)
Persistent photoconductance is a phenomenon found in many semiconductors, by which light induces long-lived excitations in electronic states. Commonly, persistent photoexcitation leads to an increase of carriers (accumulation), though occasionally it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4f8aaa23749d4e220398c0d300f7edf3
https://pubmed.ncbi.nlm.nih.gov/32639817
https://pubmed.ncbi.nlm.nih.gov/32639817
Autor:
Yoann Lechaux, Minj, Albert, Méchin, Laurence, Hu Liang, Geens, Karen, Ming Zhao, Simoen, Eddy, Guillet, Bruno
Publikováno v:
ECS Meeting Abstracts; 2021, Vol. MA2021-01 Issue 1, p2043-2043, 1p
Autor:
Matej Pastorek, Aurélien Olivier, Yoann Lechaux, Nicolas Wichmann, Théano Karatsori, Maria Fahed, Alexandre Bucamp, Ahmed Addad, David Troadec, Gérard Ghibaudo, Ludovic Desplanque, Xavier Wallart, Sylvain Bollaert
Publikováno v:
Nanotechnology; 1/18/2019, Vol. 30 Issue 3, p1-1, 1p
Autor:
Lechaux, Yoann, Chen, Yu, Minj, Albert, Sánchez, Florencio, Herranz, Gervasi, Méchin, Laurence, Guillet, Bruno
Publikováno v:
Applied Physics Letters; 8/22/2022, Vol. 121 Issue 8, p1-7, 7p
Publikováno v:
Semiconductor Science & Technology; Feb2021, Vol. 36 Issue 2, p1-8, 8p
Autor:
Lechaux, Y, Íńiguez-de-la-Torre, I, Novoa-López, J A, García-Pérez, Ó, Sánchez-Martín, H, Millithaler, J F, Vaquero, D, Delgado-Notario, J A, Clericň, V, González, T, Mateos, J
Publikováno v:
Semiconductor Science & Technology; Nov2020, Vol. 35 Issue 11, p1-8, 8p
Publikováno v:
2016 IEEE Nanotechnology Materials & Devices Conference (NMDC); 2016, p1-2, 2p
Publikováno v:
Journal of Physics: Conference Series; Oct2015, Vol. 647 Issue 1, p1-1, 1p