Zobrazeno 1 - 10
of 375
pro vyhledávání: '"YoHan Kim"'
Autor:
Pasquale D’Acunzo, Elentina K. Argyrousi, Jonathan M. Ungania, Yohan Kim, Steven DeRosa, Monika Pawlik, Chris N. Goulbourne, Ottavio Arancio, Efrat Levy
Publikováno v:
Molecular Neurodegeneration, Vol 19, Iss 1, Pp 1-14 (2024)
Abstract Background Hypometabolism tied to mitochondrial dysfunction occurs in the aging brain and in neurodegenerative disorders, including in Alzheimer’s disease, in Down syndrome, and in mouse models of these conditions. We have previously shown
Externí odkaz:
https://doaj.org/article/152d303abcc5498582c312cac72d05ac
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Interactions between monatomic ions and water molecules are fundamental to understanding the hydration of complex polyatomic ions and ionic process. Among the simplest and well-established ion-related reactions is dissolution of salt in wate
Externí odkaz:
https://doaj.org/article/819010e2d1d446fcac6262e5ea8775c6
Publikováno v:
Biosensors and Bioelectronics: X, Vol 19, Iss , Pp 100490- (2024)
PD1/PD-L1 checkpoint inhibitors are at the forefront of cancer immunotherapies. However, the overall response rate remains only 10–30%. Even among initial responders, drug resistance often occurs, which can lead to prolonged use of a futile therapy
Externí odkaz:
https://doaj.org/article/47a5116c8d0c4bb9a4b71ace27585800
Autor:
Junha Suk, Yohan Kim, Jungho Do, Garoom Kim, Woojin Rim, Sanghoon Baek, Seiseung Yoon, Soyoung Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 898-904 (2024)
In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the distributed resistance coefficient, which can be used when curre
Externí odkaz:
https://doaj.org/article/b169c32d94e548189b05ab22127e4800
Autor:
Jinyoung Choi, Hyunjoon Jeong, Sangmin Woo, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 65-73 (2024)
The artificial neural network (ANN)-based compact model has significant advantages over physics-based standard compact models such as BSIM-CMG because it can achieve higher accuracy over a wide range of geometric parameters. This makes it particularl
Externí odkaz:
https://doaj.org/article/049f485f178443b79577e12895cf46a6
Autor:
Shankar Suman, Wendy K. Nevala, Alexey A. Leontovich, Caitlin Ward, James W. Jakub, Yohan Kim, Liyi Geng, Noah A. Stueven, Chathu L. Atherton, Raymond M. Moore, Jill M. Schimke, Fabrice Lucien-Matteoni, Sarah A. McLaughlin, Svetomir N. Markovic
Publikováno v:
Biomolecules, Vol 14, Iss 7, p 837 (2024)
CD36 expression in both immune and non-immune cells is known to be directly involved in cancer metastasis. Extracellular vesicles (EVs) secreted by malignant melanocytes play a vital role in developing tumor-promoting microenvironments, but it is unc
Externí odkaz:
https://doaj.org/article/aea87e2bdc6e4ec9bf216716f6fc9d04
Autor:
Yonggang Kim, Yohan Kim
Publikováno v:
Sensors, Vol 24, Iss 8, p 2399 (2024)
In high-density network environments with multiple access points (APs) and stations, individual uplink scheduling by each AP can severely interfere with the uplink transmissions of neighboring APs and their associated stations. In congested areas whe
Externí odkaz:
https://doaj.org/article/242a1cb7babd434aade5be4d6ebb6a71
Publikováno v:
Journal for ImmunoTherapy of Cancer, Vol 11, Iss Suppl 1 (2023)
Externí odkaz:
https://doaj.org/article/0b7b3dad8261409c846654f196dbd30c
Autor:
Yohan Kim, Soyoung Kim
Publikováno v:
IEEE Access, Vol 11, Pp 93956-93967 (2023)
When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics.
Externí odkaz:
https://doaj.org/article/6d31c5defa1a478f9eb3f571b51de558
Autor:
Hyunjoon Jeong, Sangmin Woo, Jinyoung Choi, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 153-160 (2023)
In this paper, we present a fast and expandable artificial neural network (ANN)-based compact model and parameter extraction flow to replace the existing complicated compact model implementation and model parameter extraction (MPE) method. In additio
Externí odkaz:
https://doaj.org/article/0cc50706c7ca472e91db8af1acef6556