Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yo Sakata"'
Autor:
Emily Gallagher, Erik Verduijn, Rik Jonckheere, Yutaka Kodera, Norihito Fukugami, Yo Sakata, Genta Watanabe
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
This paper discusses defectivity of a black border around the mask pattern of a reticle for extreme EUV lithography. An opaque image border is intended to overcome the limitation of the reticle masking blades of the scanner, in providing sufficiently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1db522071cc8d1b9b41c73586c35c5a
https://doi.org/10.1117/12.2197682
https://doi.org/10.1117/12.2197682
Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond
Autor:
Ramasubramanian Kottumakulal Jaganatharaja, Jun Kotani, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk, Yutaka Kodera, Haiko Rolff, Robert de Kruif, Ad Lammers, Eelco van Setten, Hiroaki Morimoto, Shinpei Kondo, Brid Connolly, Albrecht Ullrich, Tomohiro Imoto, Norihito Fukugami, Yo Sakata, Natalia Davydova
Publikováno v:
SPIE Proceedings.
Photomask is at the heart of a lithographic scanner’s optical path. It cannot be left non-optimized from the imaging point of view. In this work we provide new insights on two critical aspects of EUV mask architecture: optimization of absorber for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26ca2921d588b1098109f0651d3303c
https://doi.org/10.1117/12.2066299
https://doi.org/10.1117/12.2066299
Autor:
Haiko Rolff, Jun Kotani, Brid Connolly, Norihito Fukugami, Tomohiro Imoto, Shinpei Kondo, Robert de Kruif, Albrecht Ullrich, Hiroaki Morimoto, Yutaka Kodera, Yo Sakata, Ad Lammers, Natalia Davydova, Guido Schiffelers, Eelco van Setten, Joep van Dijk
Publikováno v:
SPIE Proceedings.
The impact of various mask parameters on CDU combined in a total mask budget is presented, for 22 nm lines, for reticles used for NXE:3300 qualification. Apart from the standard mask CD measurements, actinic spectrometry of multilayer is used to qual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c072fe25851711064976568f42446f8
https://doi.org/10.1117/12.2072945
https://doi.org/10.1117/12.2072945
Autor:
Brid Connolly, Norihito Fukugami, Shinpei Kondo, Jun Kotani, Tomohiro Imoto, Dries van Gestel, Dorothe Oorschot, David Rio, Robert de Kruif, Noreen Harned, John Zimmerman, Hiroaki Morimoto, Natalia Davydova, Yo Sakata
Publikováno v:
SPIE Proceedings.
The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (ReMa) blades and the die. When printing a die at de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e229b9f17ecf52f04e7ecea26d8193
https://doi.org/10.1117/12.2027596
https://doi.org/10.1117/12.2027596
Publikováno v:
SPIE Proceedings.
EUV blank defect is one of the key issues the industry has to overcome to implement EUV lithography for HVM (high volume manufacturing). Several inspection techniques for EUV blank defect detection have been proposed, but the blank defect criteria fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4694ca2dee0ce9b920519b322f3c171a
https://doi.org/10.1117/12.2031845
https://doi.org/10.1117/12.2031845
Publikováno v:
IFIP Advances in Information and Communication Technology ISBN: 9783642403514
APMS (1)
APMS (1)
This paper proposes an adaptive kanban and production capacity control system as a new production planning and control mechanism for Just-in-Time environments to minimize the long term average inventories, Work-In-Process, backorders and operating co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e421347e7a240ace97e3af6207275137
https://doi.org/10.1007/978-3-642-40352-1_57
https://doi.org/10.1007/978-3-642-40352-1_57
Autor:
Takeshi Isogawa, Genta Watanabe, Tsuyoshi Tanaka, Kazuaki Matsui, Hiroaki Morimoto, Norihito Fukugami, Shinpei Kondo, Yutaka Kodera, Yo Sakata, Shinji Akima, Jun Kotani
Publikováno v:
SPIE Proceedings.
EUV lithography is the most promising candidate for semi conductor device manufacturing of 1x nm half pitch and beyond. For the practical use, EUV mask with a thin absorber could be adopte d because of less shadowing effect. EUV reflectivity from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d31f27954ab21ccd0eae1a623b761a2b
https://doi.org/10.1117/12.965536
https://doi.org/10.1117/12.965536
Publikováno v:
SPIE Proceedings.
Two types of blanks, EUV A and EUV B, are the leading EUV blanks contenders. They are evaluated and compared with OMOG blank for their suitability as a photomask blanks. For defect inspection evaluation, contrast for pattern image and sensitivity for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6da8edd1964f634ff37e0210030b6f
https://doi.org/10.1117/12.867754
https://doi.org/10.1117/12.867754
Autor:
Isao Yonekura, Takashi Yoshii, Yo Sakata, Katsumi Oohira, Hidemitsu Hakii, Keishi Tanaka, Yoshiyuki Negishi, Masashi Kawashita, Koichirou Kanayama
Publikováno v:
SPIE Proceedings.
EUV mask is a reflection-type-mask, of which film and structure are very different from those of existing masks (e.g. Cr and MoSi). LWM9000 SEM of Vistec/Advantest was used for measurement of EUV masks. Two types of EUV masks were used to investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ba0ddf56a84eaff059cd79edd79886
https://doi.org/10.1117/12.746373
https://doi.org/10.1117/12.746373
Publikováno v:
SPIE Proceedings.
Organic compound contamination in a clean room is presently attracting attention as a serious problem in F 2 laserlithography. Certain organic compounds may possibly have absorption spectra in the vacuum ultra violet region (VUV),as has been indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3313257f72b1bf0113a0e4fc0635bdf3
https://doi.org/10.1117/12.557722
https://doi.org/10.1117/12.557722