Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Yizhu Xie"'
Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
Autor:
Aihua Zhong, Ping Fan, Yuanting Zhong, Dongping Zhang, Fu Li, Jingting Luo, Yizhu Xie, Kazuhiro Hane
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on b
Externí odkaz:
https://doaj.org/article/dc90982806d14f0bb6c79867ed0719b0
Publikováno v:
ACS Applied Materials & Interfaces. 14:10517-10525
Autor:
Jingting Luo, Dongping Zhang, Huimin Yu, Aifa Sun, Yangquan Liu, Ping Fan, Yue Zhou, Aihua Zhong, Bowei Shen, Yizhu Xie
Publikováno v:
International Journal of Hydrogen Energy. 47:2050-2058
Abstact H2 gas sensors for different applications require various detection ranges, such as 1–100 ppm for exhale breath test and 0–40000 ppm for H2 energy vehicles. Coarse-tuning of the detection range could be realized by the selection of the ty
Autor:
Xungang Diao, Mei Wang, Zhibin Zhang, Xiping Zeng, Guo Xing, Junji Guo, Huibin Sun, Yizhu Xie
Publikováno v:
ACS Applied Materials & Interfaces. 13:11067-11077
With large interstitial space volumes and fast ion diffusion pathways, amorphous metal oxides as cathodic intercalation materials for electrochromic devices have attracted attention. However, these incompact thin films normally suffer from two inevit
Publikováno v:
Inorganic Chemistry Frontiers. 8:2713-2724
Fabricating energy-saving, inexpensive and high-activity electrocatalysts for overall water splitting has always been a significant challenge. Electrochemical deposition is considered as a promising method for large-scale industrial applications, but
Autor:
Yizhu Xie, Vellaisamy A. L. Roy, Fan Ye, Dongping Zhang, Xing-Min Cai, Ping Fan, Karthikeyan Vaithinathan, Xiu-Fang Ma, Qian-Qian Chen
Publikováno v:
Journal of Materials Chemistry C. 8:4314-4320
To meet device applications, it is essential to fabricate nondegenerate ZnSnN2 with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN2 with mobility higher than 20 cm2
Autor:
Yizhu Xie, Yi-Bin Qiu, Dongping Zhang, Fan Ye, Jun-Jie Zeng, Huan Wang, Xing-Min Cai, Xiu-Fang Ma, Ping Fan, Bo Wang, Fan Wang
Publikováno v:
Surface and Coatings Technology. 359:360-365
Nitrogen atoms exist as nitrogen molecules in cuprous oxide doped with nitrogen and the thermal stability of nitrogen doping has not been studied. Here phase-pure cuprous oxide doped with nitrogen was prepared with a direct current magnetron sputteri
Autor:
Bo Wang, Xiu-Fang Ma, Fan Ye, Karthikeyan Vaithinathan, Jun-Jie Zeng, Fan Wang, Ping Fan, Yizhu Xie, Dongping Zhang, Vellaisamy A. L. Roy, Xing-Min Cai
Publikováno v:
Surface and Coatings Technology. 359:169-174
The deposition of ZnSnN2 by co-sputtering was studied systematically. Different deposition parameters, including substrate temperatures, N2 flow rates and different work pressure etc. were tried and the structural, optical and electrical properties w
Autor:
Erqing Xie, Zhenxing Zhang, Jingwei Du, Shengming Zhang, Baoyu Huang, Yizhu Xie, Yaxiong Zhang, Yingzhuo Sheng, Xuemei Mu, Yirong Zhao
Publikováno v:
Nanoscale. 11:14392-14399
To meet the demand of rapid development of portable and wearable electronic devices, in-plane quasi-solid-state micro-supercapacitors (QSS MSCs) have great potential as miniaturized energy storage devices. However, their ultralow areal capacitance an
Autor:
Junji, Guo, Xing, Guo, Huibin, Sun, Yizhu, Xie, Xungang, Diao, Mei, Wang, Xiping, Zeng, Zhi-Bin, Zhang
Publikováno v:
ACS applied materialsinterfaces. 13(9)
With large interstitial space volumes and fast ion diffusion pathways, amorphous metal oxides as cathodic intercalation materials for electrochromic devices have attracted attention. However, these incompact thin films normally suffer from two inevit