Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yiuri Garino"'
Autor:
Silvia Boccato, Guillaume Morard, Yiuri Garino, Chrystele Sanloup, Bin Zhao, Marc Morand, Daniele Antonangeli
Fostered by third-generation synchrotron sources, experimental studies of physical and chemical properties of liquids at high pressure and temperatures are constantly pushed towards more and more extreme conditions, with applications ranging from Ear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900bcc89dce59eedb56483d692976f8f
https://doi.org/10.5194/egusphere-egu23-14735
https://doi.org/10.5194/egusphere-egu23-14735
Autor:
Silvia Boccato, Michel Gauthier, Nicki C. Siersch, Paraskevas Parisiades, Yiuri Garino, Simon Ayrinhac, Sofia Balugani, Cécile Bretonnet, Thibault Delétang, Maëva Guillot, Katia Verbeke, Frédéric Decremps, Yoann Guarnelli, Marc Morand, Philippe Rosier, Bin Zhao, Daniele Antonangeli
Publikováno v:
Physics and Chemistry of Minerals
Physics and Chemistry of Minerals, 2022, 49 (6), pp.20. ⟨10.1007/s00269-022-01194-6⟩
Physics and Chemistry of Minerals, 2022, 49 (6), pp.20. ⟨10.1007/s00269-022-01194-6⟩
International audience; Picosecond acoustics is an optical pump-probe technique allowing to access thermoelastic properties and sound velocities of a large variety of materials under extreme conditions. Coupled with diamond anvil cells and laser heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd3f2ee0cc1b6bfbda33d626870e78ba
https://hal.science/hal-03708683
https://hal.science/hal-03708683
Publikováno v:
physica status solidi (a). 209:1978-1981
In this paper the quality of boron-doped diamond films grown by microwave (MW) plasma activated chemical vapor deposition on high pressure high temperature synthetic type Ib {111}-oriented diamond substrates is estimated from the correlations between
Publikováno v:
Diamond and Related Materials. 21:33-36
We investigated the current transport mechanism of {111}-oriented homoepitaxial diamond p – n junction. It is found that the slope of the current–voltage characteristic in semi-logarithmic scale is constant in a wide range of temperatures and the
Publikováno v:
physica status solidi (a). 207:1460-1463
We investigated the performance of the reverse characteristics of diamond Schottky diodes at high voltage. We observed that when the diode was in reverse bias voltage conditions, the negative current decayed with a stretched exponential behaviour, wh
Publikováno v:
physica status solidi (a). 206:2082-2085
We investigated the performance of Schottky diodes fabricated on diamond surface oxidized by two different techniques. A detailed comparison shows vacuum ultraviolet (VUV) light technique has better performance than the standard wet chemical techniqu
Publikováno v:
Journal of Applied Physics. 105:126109
Room-temperature fabrication of Schottky diodes was demonstrated for p-type boron-doped diamond. This fabrication method’s key technique is selective modification of surface termination from monohydride into oxygen groups using vacuum ultraviolet l