Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yitian Gu"'
Autor:
Jiaxiang Chen, Haitao Du, Haolan Qu, Han Gao, Yitian Gu, Yitai Zhu, Wenbo Ye, Jun Zou, Hongzhi Wang, Xinbo Zou
Publikováno v:
APL Machine Learning, Vol 2, Iss 2, Pp 026113-026113-9 (2024)
Artificial optoelectronic synaptic transistors have attracted extensive research interest as an essential component for neuromorphic computing systems and brain emulation applications. However, performance challenges still remain for synaptic devices
Externí odkaz:
https://doaj.org/article/f189e03ef7c94f0a87832329dd9628f8
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 540-546 (2022)
A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature threshold voltage
Externí odkaz:
https://doaj.org/article/ddd1e7abb61943f79eb6db1a29c14367
Autor:
Yangqian Wang, Yitian Gu, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, Xinbo Zou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 850-856 (2020)
Dynamic characteristics of GaN HEMT grown on a native substrate were systematically investigated at 300K and 150K. Transfer and output characteristics of the GaN HEMT were measured after various off-state stressing conditions and recovery durations.
Externí odkaz:
https://doaj.org/article/0c53cace7aee4e3c9a8b607338169ae3
Autor:
Yitian Gu, Wei Huang, Yu Zhang, Jin Sui, Yangqian Wang, Haowen Guo, Jianjun Zhou, Baile Chen, Xinbo Zou
Publikováno v:
IEEE Transactions on Electron Devices. 69:3302-3309
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ce3ee3b70e2f2b5b4f9b10646ef15a
https://doi.org/10.1109/ted.2022.3167342
https://doi.org/10.1109/ted.2022.3167342
Publikováno v:
IEEE Transactions on Electron Devices. 68:3290-3295
Temperature-dependent dynamic degradation was investigated for C-doped GaN high electron mobility transistor (HEMT) from 300 to 20 K. Pulsed ${I}$ – ${V}$ measurements with various OFF-state quiescent bias voltages revealed that current collapse (C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965fa289257d32dc579162ee89695cdd
https://doi.org/10.1109/ted.2021.3077345
https://doi.org/10.1109/ted.2021.3077345
Publikováno v:
Cell Death and Disease, Vol 15, Iss 6, Pp 1-16 (2024)
Abstract Full-length p53 (p53α) plays a pivotal role in maintaining genomic integrity and preventing tumor development. Over the years, p53 was found to exist in various isoforms, which are generated through alternative splicing, alternative initiat
Externí odkaz:
https://doaj.org/article/6c245dc1415848df9c32e4f5b265f9cc
Autor:
Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Yitian Gu, Yuxin Deng, Danni Su, Ruohan Zhang, Xing Lu, Xinbo Zou
Publikováno v:
Semiconductor Science and Technology. 38:015001
By deep level transient spectroscopy (DLTS), emission and capture behaviors have been explicitly investigated for a single electron trap in a Si-doped β-Ga2O3 epilayer. Trap characteristics including activation energy for emission (E emi = 0.8 eV),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70aa662bd5d9d281a3baed96f3beed4c
https://doi.org/10.1088/1361-6641/aca045
https://doi.org/10.1088/1361-6641/aca045
Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation
Autor:
Peng Wang, Yizhou Jiang, Yitian Gu, Menglin Huang, Wei Huang, Shiyou Chen, Zhiqiang Xiao, Xinbo Zou, Yiwu Qiu, Xinjie Zhou, Jianjun Zhou, David Wei Zhang
Publikováno v:
Applied Physics Letters. 121:143501
In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has been carried out. A negligible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::095cba694a08790fddd074e84b845f03
https://doi.org/10.1063/5.0094090
https://doi.org/10.1063/5.0094090
Publikováno v:
Microelectronics Journal. 125:105464
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f132563206f36468d6a2fbd5b6c07f3c
https://doi.org/10.1016/j.mejo.2022.105464
https://doi.org/10.1016/j.mejo.2022.105464
Publikováno v:
Electronics; Volume 11; Issue 13; Pages: 1958
This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05430bf162668dd198a15fd5c5feadf4
https://doi.org/10.3390/electronics11131958
https://doi.org/10.3390/electronics11131958