Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yip Kim Hong"'
Autor:
Alfred Quah, Teo Angela, Zhihong Mai, Tam Yong Seng, Ang Ghim Boon, C. Q. Chen, Ng Hui Peng, Jeffrey Lam, Yip Kim Hong
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the rapid development of semiconductor manufacturing technologies, IC devices evolve to smaller feature sizes and higher densities, and thus the task of performing successful failure analysis (FA) is becoming increasingly difficult. Device minia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8571cf218c72e6bfe8081aa734a585
https://doi.org/10.31399/asm.cp.istfa2014p0250
https://doi.org/10.31399/asm.cp.istfa2014p0250
Autor:
Loh Sock Khim, Ang Ghim Boon, Ng Hui Peng, Zhao Si Ping, Neo Soh Ping, Chen Changqing, Ng Peng Tiong, Yip Kim Hong, Angela Teo
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a low yield case with a specific failing pattern in the wafers and related to a systematic front-end defect in DNWELL from a specific location and structure in the device was discussed. This paper also illustrates and put emphasis on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ccdc40c621adbba6375bcd4b188d38
https://doi.org/10.1109/ipfa.2013.6599149
https://doi.org/10.1109/ipfa.2013.6599149
Publikováno v:
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ae64c5cbfcab51f711af7d4bc73564
https://doi.org/10.1109/ipfa.2010.5531981
https://doi.org/10.1109/ipfa.2010.5531981
Autor:
Yip, Kim Hong.
This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE). Master
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1392::6cbed3e87093db3cac35c229899432fc
http://hdl.handle.net/10356/3902
http://hdl.handle.net/10356/3902
Autor:
Ang, Ghim Boon, Chen Changqing, Zhao Si Ping, Neo Soh Ping, Yip Kim Hong, Loh Sock Khim, Ng Hui Peng, Teo, Angela, Ng Peng Tiong
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2013, p177-181, 5p