Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Yiorgos Tsiatouhas"'
Autor:
Simon-Ilias Poulis, Georgios Papatheodorou, Christoforos Papaioannou, Yiorgos Sfikas, Marina E. Plissiti, Aristides Efthymiou, John Liaperdos, Yiorgos Tsiatouhas
Publikováno v:
Technologies, Vol 10, Iss 1, p 36 (2022)
Visible light communication (VLC) is an upcoming wireless communication technology. In a VLC system, signal integrity under low illumination intensity and high transmission frequencies are of great importance. Towards this direction, the performance
Externí odkaz:
https://doaj.org/article/ce6bfb6fb41947b58f8159331c2ee5cc
Publikováno v:
Integration. 88:108-115
Autor:
Georgios Megas, Georgios Papatheodorou, Yiorgos Sfikas, Aristides Efthymiou, Yiorgos Tsiatouhas
Publikováno v:
2022 Panhellenic Conference on Electronics & Telecommunications (PACET).
Publikováno v:
2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC).
Publikováno v:
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST).
Autor:
Christoforos Papaioannou, Marina E. Plissiti, Yiorgos Sfikas, Georgios Papatheodorou, Simon-Ilias Poulis, Aristides Efthymiou, Yiorgos Tsiatouhas
Publikováno v:
2022 IEEE International Black Sea Conference on Communications and Networking (BlackSeaCom).
Publikováno v:
Journal of Electronic Testing. 37:191-203
Through Silicon Vias (TSVs) are crucial elements for the reliable operation and yield of three dimensional integrated circuits (3D ICs). Defects are a serious concern in TSV structures. A post-bond, parallel testing and diagnosis scheme is proposed i
Publikováno v:
Journal of Electronic Testing. 37:65-82
Serious reliability concerns of Static Random Access Memories (SRAMs) in nanometer technologies are the increased process variations as well as the various aging mechanisms. Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) phenomena
Autor:
Marina E. Plissiti, Christoforos Papaioannou, Yiorgos Sfikas, Georgios Papatheodorou, Simon-Ilias Poulis, Aristides Efthymiou, Yiorgos Tsiatouhas
Publikováno v:
2021 IEEE International Mediterranean Conference on Communications and Networking (MeditCom).
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:64-72
Transistor bias-temperature instability (BTI) effects are a serious reliability concern in nanometer technology static random access memories (SRAMs). In this paper, a methodology and a circuit for the periodic monitoring of BTI induced aging in SRAM