Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yinlu Gao"'
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-7 (2023)
Abstract Antiferromagnetic spin dynamics is the key issue to develop spintronic devices. We adopt ab initio nonadiabatic molecular dynamics with spin–orbit-coupling (SOC) to investigate photoinduced spin dynamics in an antiferromagnetic semiconduct
Externí odkaz:
https://doaj.org/article/7d67a1e1fdb2407a890448464ec6b996
Autor:
Yinlu Gao, Gulijiannaiti Abuduaini, Chenhe Yang, Shanshan Zhang, Yanrong Zhang, Hongxiu Fan, Xu Teng, Chenligen Bao, Hongcheng Liu, Dawei Wang, Tingting Liu
Publikováno v:
Frontiers in Nutrition, Vol 9 (2022)
Stropharia rugosoannulata is a widely grown edible mushroom with a high nutritional value. S. rugosoannulata polysaccharides is one of the most important bioactive components of S. rugosoannulata and has a wide range of activities. A S. rugosoannulat
Externí odkaz:
https://doaj.org/article/f8d49cfe147145c089e1c31e087704fc
Autor:
Jing Li, Yinlu Gao, Xinglai Zhang, Lixin Chen, Yonghui Ma, Liu Yang, Qing Liu, Xue Jiang, Baodan Liu
Publikováno v:
ACS Applied Electronic Materials. 4:5267-5276
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::676eca617e17b95a32ecf375d42303e4
https://doi.org/10.1021/acsaelm.2c00955
https://doi.org/10.1021/acsaelm.2c00955
Publikováno v:
Physical Chemistry Chemical Physics. 24:17615-17622
Our DFT study provides a comprehensive insight into the vacancy effect of VSe2 monolayers on magnetism.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d46c39cef3762c57df368014025c66b
https://doi.org/10.1039/d2cp01537d
https://doi.org/10.1039/d2cp01537d
Autor:
Ruonan Min, Yinlu Gao, Xue Jiang, Xiong Yang, Linwei Li, Huijun Kang, Enyu Guo, Zongning Chen, Tongmin Wang
Publikováno v:
Chemical Engineering Journal. 464:142531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5276cfc695cb63560abbd380d3f0d966
https://doi.org/10.1016/j.cej.2023.142531
https://doi.org/10.1016/j.cej.2023.142531
Publikováno v:
Journal of Materials Science. 55:9343-9353
In this study, we present six structural models for amorphous Ga2O3 (a-Ga2O3) with different mass densities from ab initio molecular dynamics simulations. The detailed local structural order, non-perfect coordination number, electronic and vibrationa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7458579701f5d39ecf7cac85a578a15
https://doi.org/10.1007/s10853-020-04713-4
https://doi.org/10.1007/s10853-020-04713-4
Publikováno v:
Applied Physics Letters. 121:162402
CrSBr monolayer is a promising ferromagnetic (FM) semiconductor with stable magnetic ground state, large bandgap, and high carrier density. However, its Curie temperature ( TC) of about 146 K is still below room temperature. Herein, electronic and ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4922d5742ba4352ff9df522ac6a66ebb
https://doi.org/10.1063/5.0098799
https://doi.org/10.1063/5.0098799
Publikováno v:
Chinese Physics B. 31:117304
The GaN-based heterostructures are widely used in optoelectronic devices, but the complex surface reconstructions and lattice mismatch greatly limit the applications. The stacking of two-dimensional transition metal dichalcogenide (TMD = MoS2, MoSSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24de18f7a0739271e106fcd58ac831ba
https://doi.org/10.1088/1674-1056/ac6eee
https://doi.org/10.1088/1674-1056/ac6eee
Publikováno v:
Journal of Alloys and Compounds. 794:374-384
Using ab initio calculations, we systemically investigated the energetics and stability of various defects (vacancy, interstitial atom, anti-site defect and dopant atom), optical properties of β-Ga2O3 with O monovacancy, electronic structures of β-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e18aee300d0f7b3281ec24b5bb7d99
https://doi.org/10.1016/j.jallcom.2019.04.253
https://doi.org/10.1016/j.jallcom.2019.04.253
Autor:
Zhifeng Liu, Wangxiang Feng, Hongming Weng, Yinlu Gao, Jijun Zhao, Hongli Xin, Yugui Yao, Peng-Fei Liu
Publikováno v:
Materials Horizons. 6:781-787
In the presence of spin–orbit coupling (SOC), achieving both spin and valley polarized Dirac states is significant to promote the fantastic integration of Dirac physics, spintronics and valleytronics. Based on ab initio calculations, here we demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9795fdf9d80793aa4c5ef17e8d5fd64
https://doi.org/10.1039/c8mh01588k
https://doi.org/10.1039/c8mh01588k