Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yinjie Ding"'
Autor:
Fei Lyu, Zhenyan Zhang, Eng-Huat Toh, Xinfu Liu, Yinjie Ding, Yifan Pan, Chengjie Li, Li Li, Jin Sha, Hongbing Pan
Publikováno v:
Sensors, Vol 15, Iss 1, Pp 672-686 (2014)
This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are character
Externí odkaz:
https://doaj.org/article/29e85f5ddd4142ba9df93650c410c2d0
Autor:
Fei Lyu, Xinfu Liu, Yinjie Ding, Eng-Huat Toh, Zhenyan Zhang, Yifan Pan, Zhen Wang, Chengjie Li, Li Li, Jin Sha, Hongbing Pan
Publikováno v:
Sensors, Vol 16, Iss 1, p 106 (2016)
This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points i
Externí odkaz:
https://doaj.org/article/bba3a7705a7e4991b2072a35e1f95ec4
Autor:
Yongshun Sun, Eng Huat Toh, Patrick Cao, Bin Liu, Gong Cheng, Shiang Yang Ong, Yinjie Ding, Mohd Nurul Islam, Elgin Quek, Michael Tiong, R.K. Jain, Aaron Liu, Tam Lyn Tan
Publikováno v:
2017 IEEE SENSORS.
Low-cost, low-power, and high-sensitivity System-on-Chip (SoC) Hall Effect sensors for 0.18μm and 0.13μm technologies and beyond are developed in this work. A best-inclass current-related sensitivity Si of 418 V/A∗T is achieved by a Hall device w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280f391a9927bba02ea99e76c77ad57a
https://doi.org/10.1109/icsens.2017.8234272
https://doi.org/10.1109/icsens.2017.8234272
Autor:
Yifan Pan, Eng Huat Toh, Lyu Fei, Yinjie Ding, Chengjie Li, Jin Sha, Hongbing Pan, Zhenyan Zhang, Xinfu Liu, Li Li
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 15, Iss 1, Pp 672-686 (2014)
Sensors
Volume 15
Issue 1
Pages 672-686
Sensors, Vol 15, Iss 1, Pp 672-686 (2014)
Sensors
Volume 15
Issue 1
Pages 672-686
This paper studies the effects of the covering layers on the performance of a cross-like Hall plate. Three different structures of a cross-like Hall plate in various sizes are designed and analyzed. The Hall plate sensitivity and offset are character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c27604ec334a8747842f953272e6a6ce
http://europepmc.org/articles/PMC4327042
http://europepmc.org/articles/PMC4327042
Publikováno v:
IEEE Transactions on Electron Devices. 61:2647-2655
We report the experimental demonstration of strained p-channel FinFETs featuring a GeTe liner stressor that exhibits very large volume contraction (~10%) during phase change. Conformally grown GeTe liner was formed on FinFETs with sub-50-nm gate leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8388ea139c5ff9e4ada2724fa92e988c
https://doi.org/10.1109/ted.2014.2328667
https://doi.org/10.1109/ted.2014.2328667
Publikováno v:
IEEE Transactions on Electron Devices. 61:1963-1971
We report the demonstration of a novel ${\rm ZnS}\hbox{-}{\rm SiO}_{2}$ liner stressor to enhance drive current in Si n-channel FinFETs (N-FinFETs). ${\rm ZnS}\hbox{-}{\rm SiO}_{2}$ expands during thermal anneal due to an increase in crystallite size
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b48cbe2eeb2e8882abb4de227c2e18
https://doi.org/10.1109/ted.2014.2317717
https://doi.org/10.1109/ted.2014.2317717
Publikováno v:
IEEE Transactions on Electron Devices. 60:2703-2711
A novel Ge2Sb2Te5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707e25f77f6af36f6c464b732430ba24
https://doi.org/10.1109/ted.2013.2271643
https://doi.org/10.1109/ted.2013.2271643
Publikováno v:
Solid-State Electronics. 83:37-41
We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge + implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by Crystallization. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d5b1bcbc749474a7854d0fc91ca01eb
https://doi.org/10.1016/j.sse.2013.01.027
https://doi.org/10.1016/j.sse.2013.01.027
Autor:
Xinfu Liu, Shuzhuan He, Zhenyan Zhang, Yifan Pan, Yinjie Ding, Li Li, Eng-Huat Toh, Lyu Fei, Zidi Qing, Hongbing Pan
Publikováno v:
2016 Sixth International Conference on Instrumentation & Measurement, Computer, Communication and Control (IMCCC).
The mask-misalignment offset, as an inevitable part of the initial offset, is necessary to be reduced in the design of cross-like Hall devices. In this paper, a method is proposed to reduce the mask-misalignment offset. In order to find the method to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f831ff6f1ee4899d52c67bc48338b9
https://doi.org/10.1109/imccc.2016.65
https://doi.org/10.1109/imccc.2016.65
Autor:
Chengjie Li, Zhen Wang, Yinjie Ding, Zhenyan Zhang, Lyu Fei, Xinfu Liu, Yifan Pan, Li Li, Eng Huat Toh, Jin Sha, Hongbing Pan
Publikováno v:
Sensors (Basel, Switzerland)
Sensors; Volume 16; Issue 1; Pages: 106
Sensors, Vol 16, Iss 1, p 106 (2016)
Sensors; Volume 16; Issue 1; Pages: 106
Sensors, Vol 16, Iss 1, p 106 (2016)
This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1cf9bc13bcad1279401533c4b24108b
https://pubmed.ncbi.nlm.nih.gov/26784199
https://pubmed.ncbi.nlm.nih.gov/26784199