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pro vyhledávání: '"Yingxing Cui"'
Autor:
Shuairong Deng, Lianghui Li, Yunfei Gu, Lin Zhang, Yingxing Cui, Kun Zhou, Juntao Li, Zhiqiang Li
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we investigate the influence of carrier lifetime on SiC GTO and PiN devices for pulsed power application. Both the device characteristics and the circuit dynamic performance in pulsed discharging system are studied based on simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5b0bd6189e784bb86f81cc2611803d
https://doi.org/10.1109/ispsd.2019.8757643
https://doi.org/10.1109/ispsd.2019.8757643
