Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yingshuo Qin"'
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1288 (2022)
Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail
Externí odkaz:
https://doaj.org/article/38b377915734419e8f4666ff8d5bd5bd
Publikováno v:
Micromachines, Vol 13, Iss 1, p 106 (2022)
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts
Externí odkaz:
https://doaj.org/article/08cad691dccb4908b4b700ff93600dd2
Publikováno v:
Chemical Physics. 561:111603
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb600c40747f27237ca07750c74fd0d6
https://doi.org/10.1016/j.chemphys.2022.111603
https://doi.org/10.1016/j.chemphys.2022.111603
Publikováno v:
Microelectronics Reliability. 136:114665
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6d121b91555b273682e22ebbf71693
https://doi.org/10.1016/j.microrel.2022.114665
https://doi.org/10.1016/j.microrel.2022.114665