Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yingda Qian"'
Autor:
Yingda Qian, Yuanlan Liang, Xuguang Luo, Kaiyan He, Wenhong Sun, Hao-Hsiung Lin, Devki N. Talwar, Ting-Shan Chan, Ian Ferguson, Lingyu Wan, Qingyi Yang, Zhe Chuan Feng
Publikováno v:
Advances in Materials Science and Engineering, Vol 2018 (2018)
A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray a
Externí odkaz:
https://doaj.org/article/ef9f6515e8bd49e4b9c0c98cb9266f06
Autor:
Mariko Murayama, Yuri Tamamoto, Yingda Qian, Asuka Ishizawa, Simon Hammersley, Iain F. Crowe, Shuji Komuro, Xinwei Zhao
Publikováno v:
Optics and Photonics Journal. 12:215-224
Autor:
Xuguang Luo, Xiong Zhang, Yingda Qian, Ruiting Fang, Bin Chen, Yang Shen, Shenyu Xu, Jiadong Lyu, Mu-Jen Lai, Guohua Hu, Yiping Cui
Publikováno v:
Applied Surface Science. 608:155262
Publikováno v:
Solar Energy. 194:461-470
A fixed optical fiber solar system for long distance daylighting used in buildings is proposed. Its structure and working principle have been introduced. The proposed system takes the advantages of both light pipe and traditional optical fiber system
Autor:
Chi Zhang, Devki N. Talwar, Kaiyan He, Hong Yang, Jyh-Fu Lee, Zhe Chuan Feng, Yingda Qian, Hao-Hsiung Lin, Dong-Sing Wuu, Lingyu Wan
Publikováno v:
Applied Surface Science. 479:1246-1253
Comprehensive structural, electrical and optical studies are performed on a series of gallium oxide (Ga2O3) ultrathin films grown on sapphire with different growth temperatures (400–1000 °C) by pulsed laser deposition, via X-ray absorption spectro
Autor:
Xuguang Luo, Xiong Zhang, Bin Chen, Yang Shen, Yong Tian, Aijie Fan, Shuai Chen, Yingda Qian, Zhe Zhuang, Guohua Hu
Publikováno v:
Materials Science in Semiconductor Processing. 144:106612
Autor:
Xuguang Luo, Zhe Chuan Feng, Devki N. Talwar, Lingyu Wan, Qingyi Yang, Hao-Hsiung Lin, Wenhong Sun, Ting-Shan Chan, Yingda Qian, Ian T. Ferguson, Kaiyan He, Yuanlan Liang
Publikováno v:
Advances in Materials Science and Engineering, Vol 2018 (2018)
A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray a
Autor:
Chen Li, Jason Hoo, Yingda Qian, Xiaohang Li, Shiping Guo, Jianzhe Liu, Houqiang Xu, Kaiyan He, Jichun Ye, Liang Xu, Moheb Sheikhi, Zhe Chuan Feng, Feras AlQatari, Wei Guo
Publikováno v:
Photonics Research. 8:812
We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs) with lateral polarity domains. The localized potential maximum is predicted near the domain boundaries by first-pri
Autor:
Yao Li, Dong-Sing Wuu, Daniel Seidlitz, Nikolaus Dietz, Yingda Qian, Ian T. Ferguson, Xiang Lu, Qingxuan Li, Zhe Chuan Feng, Devki N. Talwar, Lingyu Wan, Chi Zhang, Kaiyan He, Shih-Yung Huang, Yuanlan Liang
Publikováno v:
Materials Research Express. 6:016407
In-rich InGaN nanoscale thin films grown on (0001) sapphire (Al2O3) using migration enhanced plasma-assisted metal-organic chemical vapor deposition (MEPA-MOCVD) method are characterized by high-resolution x-ray diffraction (HR-XRD), x-ray photoelect
Autor:
Ming Tian, Chi Zhang, Kaiyan He, D. H. Meng, Ian T. Ferguson, S. D. Yao, Lingyu Wan, Devki N. Talwar, Junyi Zhai, L. Li, Yingda Qian, Zhe Chuan Feng
Publikováno v:
Optical Materials Express. 8:3184
The optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backsca