Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yingce Yan"'
Autor:
Qi Wang, Zhigang Jia, Xiaomin Ren, Yingce Yan, Zhiqiang Bian, Xia Zhang, Shiwei Cai, Yongqing Huang
Publikováno v:
AIP Advances, Vol 3, Iss 7, Pp 072111-072111 (2013)
In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as l
Externí odkaz:
https://doaj.org/article/22688d9c98b9470fbc37252d149e1621
Autor:
Yingce Yan, Huifang Ma
Publikováno v:
Optik. 126:4608-4611
Based on the generalized stochastic nonlinear Schrodinger equation, the effect of initial chirp on the broadband amplitude noise of supercontinuum generated in fiber normal dispersion regime is investigated numerically. The results show that, in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3937c06676325079594e7265ab5f9e76
https://doi.org/10.1016/j.ijleo.2015.08.060
https://doi.org/10.1016/j.ijleo.2015.08.060
Autor:
Xiaolong Liu, Shiwei Cai, Xia Zhang, Yifan Wang, Yingce Yan, Xiaomin Ren, Qi Wang, Zhigang Jia, Yongqing Huang
Publikováno v:
Materials Science in Semiconductor Processing. 16:1713-1717
Boron-containing GaAsSb/GaAs quantum wells (QWs) with different antimony (Sb) mole fractions were grown by low-pressure metal–organic chemical vapor deposition for the first time. The effects of boron incorporation on the performance of GaAsSb/GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69a368258de99c387231992815a89f38
https://doi.org/10.1016/j.mssp.2013.04.024
https://doi.org/10.1016/j.mssp.2013.04.024
Publikováno v:
Journal of Alloys and Compounds. 563:18-21
We have performed the first-principles density functional calculations of the electronic and optical properties of quaternary B x Ga 1− x As 1− y Sb y alloy lattice-matched to GaAs with boron concentration x = 3.125% and 6.25%. All the calculatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d47c88f5c60fb88a88834752a0f67ed
https://doi.org/10.1016/j.jallcom.2013.02.071
https://doi.org/10.1016/j.jallcom.2013.02.071
Publikováno v:
Physica B: Condensed Matter. 407:4570-4573
The first-principle calculations based on density functional theory have been used to study the electronic and optical properties of zinc-blende BInGaAs quaternary alloy lattice-matched to GaAs. The calculated results show the band gap of BInGaAs all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::952f92402ed079cd0d8fec1d4547550f
https://doi.org/10.1016/j.physb.2012.08.021
https://doi.org/10.1016/j.physb.2012.08.021
Publikováno v:
Physica B: Condensed Matter. 407:112-115
First-principle plane-wave pseudopotential calculations using the density-functional theory within the local density approximation (LDA) have been carried out to investigate the structural, electronic and thermodynamic properties of zinc-blende dilut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6bdeb749ff7733f1afabfb4a5c7a9ef
https://doi.org/10.1016/j.physb.2011.09.135
https://doi.org/10.1016/j.physb.2011.09.135
Publikováno v:
SAGE Open, Vol 13 (2023)
This study attempts to investigate the asymmetric impacts of oil price and component shocks on categorical economic policy uncertainties (EPUs) in China. A novel multiple thresholds nonlinear autoregressive distributed lagged model (ARDL) was employe
Externí odkaz:
https://doaj.org/article/d64c404368e94e9f87df161eedc9bcfa
Autor:
Shiwei Cai, Zhiqiang Bian, Bochang Li, Xiaomin Ren, Zhigang Jia, Qi Wang, Yongqing Huang, Yingce Yan, Eryang Wang
Publikováno v:
Scopus-Elsevier
Through the adoption of critical point drying, doubly curved regions (DCR) observed on the III-V microtubes vanished. This process verified that the DCR does not result from the natural release of the residual strain energy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dda834b9b86db4d771e5a47618c42489
https://doi.org/10.1364/acpc.2013.af2b.32
https://doi.org/10.1364/acpc.2013.af2b.32
Autor:
Yifan Wang, Yongqing Huang, Jun Wang, Qi Wang, Xiaoyi Li, Zhigang Jia, Shiwei Cai, Can Deng, Yingce Yan, Xiaomin Ren
Publikováno v:
Scopus-Elsevier
The epitaxy of GaAs/Si(001) has been carried out via inserting different buffer layers and different SLSs by MOCVD. High quality epilayers were obtained by AlAs buffer layer and GaAs0.85P0.15/GaAs SLS.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06e762d8c89f73258092a3d65ca6905b
https://doi.org/10.1364/acp.2013.af4a.2
https://doi.org/10.1364/acp.2013.af4a.2
Publikováno v:
Optoelectronic Devices and Integration IV.
InAs/GaAs quantum dots (QDs) were grown by Metal-Organic Chemical Vapour Deposition (MOCVD) in the Stranski-Krastanow growth mode. The influence of growth parameters such as V/III ratio, growth temperature, QDs deposit thickness and the deposition ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a26f85cc17829bdb2ccc5fd57c31115
https://doi.org/10.1117/12.999608
https://doi.org/10.1117/12.999608