Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Ying-Jhe Yang"'
Publikováno v:
ECS Transactions. 33:57-63
The recovery of light induced degradation of the micromorph solar cells is investigated by applying reverse bias for the first time. The illuminated current density-voltage (J-V) characteristics and external quantum efficiency (EQE) show that the deg
Publikováno v:
ECS Transactions. 27:1147-1151
Two possible side effects when evaluating the crystalline volume fraction of microcrystalline silicon films by Raman spectroscopy measurement have been investigated. Large laser power incident into the microcrystalline silicon film during measurement
Publikováno v:
IEEE Transactions on Electron Devices. 56:1736-1745
The flatband-voltage shift of metal-oxide-silicon capacitors is investigated under the application of low-level stress (up to 220 MPa of biaxial stress and 380 MPa of uniaxial stress) to different substrate orientations. We propose that the flatband-
Autor:
Ching-Fang Huang, Chee-Wee Liu, Chee-Zxaing Liu, P.-S. Kuo, Ying-Jhe Yang, Huan-Lin Chang, Hung-Chih Chang, Cheng-Yi Peng, Hung-Chang Sun
Publikováno v:
IEEE Electron Device Letters. 29:1332-1335
Positive bias temperature instability in p-channel polycrystalline silicon thin-film transistors is investigated. The stress-induced hump in the subthreshold region is observed and is attributed to the edge transistor along the channel width directio
Publikováno v:
ECS Transactions. 16:249-253
Nickel germanides formed on crystalline n-Ge (110) substrate are investigated. By the XRD analysis, Ni5Ge3, NiGe, and Ni2Ge phases are formed sequentially with the increasing annealing temperatures from 300oC to 600oC on n-Ge (110) substrate. NiGe, h
Autor:
Chia-Ting Cho, Wei Shuo Ho, Chee-Wee Liu, Ming-Han Liao, Cheng-Han Lee, Cheng-Yi Peng, Yen-Yu Chen, Cheng-Ya Yu, Chieh-Chun Chang, Chu-Hsuan Lin, Ying-Jhe Yang
Publikováno v:
IEEE Transactions on Nanotechnology. 7:558-564
The multicolor absorption of MOS SiGe/Si quantum-dot (QD) infrared photodetectors is demonstrated using the boron delta-doping in Si spacers. The energy-dispersive X-ray spectroscopy shows that the Ge concentration in the wetting layers is much small
Autor:
Hung-Chang Sun, Yuan-Jun Hsu, Ching-Chieh Shih, Yen-Ting Chen, Jim-Shone Chen, Ying-Jhe Yang, Chee-Wee Liu, Chun-Yuan Ku, Ching-Fang Huang
Publikováno v:
IEEE Electron Device Letters. 30:368-370
The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Nickel germanides was formed on crystalline n-Ge (100) substrate by conventional RTA annealing at temperatures ranging from 300°C to 600°C. The XRD result reveals that only the NiGe phase is observed during this process temperature range. The ortho
Autor:
King-Chuen Lin, C.-W. Chao, Chee-Wee Liu, Hung-Chang Sun, Ying-Jhe Yang, Ching-Fang Huang, Cheng-Yi Peng
Publikováno v:
2007 International Semiconductor Device Research Symposium.
Static negative and positive Bias Temperature Instability (BTI) in p-channel polycrystalline silicon thin-film transistors has been studied. However, dynamic stress condition is similar to the real operation. After dynamic BTI stress, the current inc
Publikováno v:
2007 International Semiconductor Device Research Symposium.
In this article we present detailed stress simulation characterization of the 3-D boundary effects and show that the high-performance n FET can be achieved by the ultra-high-stress CESL stressor and optimal geometric structure design. A symmetric str