Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Ying-Ciao Chen"'
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 071001 (2024)
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R _c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μ
Externí odkaz:
https://doaj.org/article/6e7194366c79490fb40abefb7ca7e291
