Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Ying Qian Wang"'
Publikováno v:
Journal of Applied Physics; 7/1/2005, Vol. 98 Issue 1, p013536, 5p, 1 Black and White Photograph, 2 Diagrams, 4 Graphs
Publikováno v:
IEEE Transactions on Electron Devices. 54:2699-2705
A novel device structure with a high-k HfO2 charge storage layer and dual tunneling layer (DTL) (SiO2/Si3N4) is presented in this paper. Combining advantages of the high trapping efficiency of high-k materials and enhanced charge injection from the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6987cbd03511393571bd4d1d94b5c491
https://doi.org/10.1109/ted.2007.904396
https://doi.org/10.1109/ted.2007.904396
Autor:
Dalong Zhu, Nan Jin, Tianpei Hong, Kang Chen, Jin Du, Xian-ling Wang, Qian Zhang, Zhaohui Lv, Jin-Kui Yang, Yiming Mu, Lijuan Yang, Li Zang, Anping Wang, Jianming Ba, Weijun Gu, Guang Ning, Guoqing Yang, Jingtao Dou, Ying-Qian Wang
Publikováno v:
Experimental biology and medicine (Maywood, N.J.). 240(11)
Kallmann syndrome, a form of idiopathic hypogonadotropic hypogonadism, is characterized by developmental abnormalities of the reproductive system and abnormal olfaction. Despite association of certain genes with idiopathic hypogonadotropic hypogonadi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::610e2ef75658fa44723ae501ea7dadfb
https://pubmed.ncbi.nlm.nih.gov/26031747
https://pubmed.ncbi.nlm.nih.gov/26031747
Autor:
Won Jong Yoo, S. K. Samanta, Yee Ngee Yeo, Dongyue Gao, Ganesh S. Samudra, Chee Ching Chong, Ying Qian Wang
Publikováno v:
Thin Solid Films. 504:209-212
We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a031d6bd2befebf52cd1e2b30487bc1e
https://doi.org/10.1016/j.tsf.2005.09.126
https://doi.org/10.1016/j.tsf.2005.09.126
Autor:
Yee-Chia Yeo, J.H. Chen, D.S.H. Chan, Dim-Lee Kwong, A. Y. Du, Ganesh S. Samudra, Ying Qian Wang, Won Jong Yoo
Publikováno v:
IEEE Transactions on Electron Devices. 51:1840-1848
We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c66a44101468e620a51be28cacfe3bd4
https://doi.org/10.1109/ted.2004.837011
https://doi.org/10.1109/ted.2004.837011
Autor:
Rohit Gupta, N. Balasubramanian, Dim-Lee Kwong, Sun Jung Kim, Yee-Chia Yeo, A. Y. Du, Zerlinda Y. L. Tan, J.H. Chen, Ying Qian Wang, Won Jong Yoo
Publikováno v:
Applied Physics Letters. 84:5407-5409
Formation of Ge nanocrystals embedded in HfAlO high-k dielectric by co-sputtering of HfO2, Al2O3, and Ge, followed by rapid thermal annealing was demonstrated. Analysis by transmission electron microscopy and x-ray photoelectron spectroscopy confirme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dcdbaf99cd64b85b29fa178be7f1c7
https://doi.org/10.1063/1.1767597
https://doi.org/10.1063/1.1767597
Autor:
N. Balasubramanian, Sungjoo Lee, Won Jong Yoo, Rohit Gupta, L. K. Bera, D.S.H. Chan, Kian Ping Loh, Ying Qian Wang, Zerlinda Y. L. Tan, Dim-Lee Kwong, Ganesh S. Samudra
Publikováno v:
Applied Physics Letters. 84:4331-4333
The in situ deposition process of SiGe nanocrystals on SiO2 and HfO2 substrates was studied using Auger electron spectroscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The Ge concentration in SiGe nanocrystals increased with dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5ff9ffcc40ad20246dd6f937a39b124
https://doi.org/10.1063/1.1758297
https://doi.org/10.1063/1.1758297
Publikováno v:
Chinese medical journal. 125(10)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::520ad99f729cffd91c58357416d81a16
https://pubmed.ncbi.nlm.nih.gov/22800883
https://pubmed.ncbi.nlm.nih.gov/22800883
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
We investigated the phase separation of HfO based high dielectric constant (k) material for the application to non-volatile memory devices. We found that Hf0.5Si0.5O2 underwent phase separation upon annealing in the temperature range of 900degC to 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f05676009ddfbe984874e2139562a0
https://doi.org/10.1109/icsict.2006.306470
https://doi.org/10.1109/icsict.2006.306470
Publikováno v:
MRS Proceedings. 830
In this paper, we investigate the chemical vapor deposition (CVD) of Ge nanocrystals (NCs) directly on hafnium oxide HfO2 dielectric for non-volatile memory applications. Germane GeH4 was used as a precursor. Atomic force microscopy (AFM), X-ray diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd335a2ac7a7ded9dcbf1edbb08afbeb
https://doi.org/10.1557/proc-830-d6.3
https://doi.org/10.1557/proc-830-d6.3