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pro vyhledávání: '"Yin-Kai Liao"'
Autor:
Yin-Kai Liao, 廖英凱
94
In this thesis, in order to improve the small gate voltage swing of conventional high electron mobility transistors (HEMT), we adopt the HEMT with inversely-graded channel (IGC-HEMT) grown on InP substrate. The experimental results show that
In this thesis, in order to improve the small gate voltage swing of conventional high electron mobility transistors (HEMT), we adopt the HEMT with inversely-graded channel (IGC-HEMT) grown on InP substrate. The experimental results show that
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83247056494064899322
Publikováno v:
Diabetes. 67
Objective: This is a cross-sectional study aimed to explore the risk factors associated with diabetes distress in type 2 diabetes. Research Design and Methods: Patients with type 2 diabetes were recruited from tertiary hospital in central Taiwan for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b28cdb9a1257fd798c553879e4fc2d45
https://doi.org/10.2337/db18-2258-pub
https://doi.org/10.2337/db18-2258-pub
Autor:
Wei-Chou Hsu, Yu-Shyan Lin, Dong-Hai Huang, Rong-Tay Hsu, Yue-Huei Wu, Yin-Kai Liao, Juin-Chin Huang
Publikováno v:
Semiconductor Science and Technology. 21:781-785
InP-based InAlAs/InxGa1?xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae646248ecd1c7a63d272741fb992250
https://doi.org/10.1088/0268-1242/21/6/012
https://doi.org/10.1088/0268-1242/21/6/012