Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yin-Chih Pan"'
Autor:
Simon M. Sze, Chih-Cheng Shih, Rui Zhang, Chih-Hung Pan, Kuan-Chang Chang, Jen-Chung Lou, Ya-Hsiang Tai, Yin-Chih Pan, Tian-Jian Chu, Ya-Liang Yang, Tai-Fa Young, Tsung-Ming Tsai, Jian-Yu Chen, Min-Chen Chen, Yu-Ting Su, Ting-Chang Chang, Yong-En Syu, Jung-Hui Chen, Geng-Wei Chang
Publikováno v:
IEEE Electron Device Letters. 34:677-679
In this letter, a double-active-layer $({\rm Zr}{:}{\rm SiO}_{x}/{\rm C}{:}{\rm SiO}_{x})$ resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4eef6115af322f89f3c18e7f14ee098
https://doi.org/10.1109/led.2013.2250899
https://doi.org/10.1109/led.2013.2250899
Autor:
Kuan-Chang Chang, Yin-Chih Pan, Ding-Hua Bao, Jen-Chung Lou, Syuan-Yong Huang, Jen-Wei Huang, Tsung-Ming Tsai, Simon M. Sze, Ting-Chang Chang, Dershin Gan, Kai-Huang Chen, Rui Zhang, Yong-En Syu, Jung-Hui Chen, Hui-Chun Huang, Tai-Fa Young
Publikováno v:
Nanoscale Research Letters
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::468b5d5e56294513d6bed1b1916ad855
https://doi.org/10.1186/1556-276x-8-523
https://doi.org/10.1186/1556-276x-8-523
Autor:
Yin-chih Pan, 潘盈志
100
With the progress of technology, large capacity and scalable are required for the future. Recent years, the physical limit is approached and a next-generation memory is needed in the future. In addition, non- volatile memory occupies more th
With the progress of technology, large capacity and scalable are required for the future. Recent years, the physical limit is approached and a next-generation memory is needed in the future. In addition, non- volatile memory occupies more th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00984147015170388301
Autor:
Syuan-Yong Huang, Yong-En Syu, Tian-Jian Chu, Jung-Hui Chen, Rui Zhang, Simon M. Sze, Kuan-Chang Chang, Yin-Chih Pan, Tsung-Ming Tsai, Kai-Huang Chen, Jen-Chung Lou, Chih-Cheng Shih, Tai-Fa Young, Ya-Liang Yang, Chih-Hung Pan, Yu-Ting Su, Ting-Chang Chang
Publikováno v:
Nanoscale Research Letters
In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d46be2bf7b7ddb84abc6ce3c059e704
http://europepmc.org/articles/PMC3874615
http://europepmc.org/articles/PMC3874615
Performance and characteristics of double layer porous silicon oxide resistance random access memory
Autor:
Min-Chen Chen, Jhih-Hong Pan, Bae-Heng Tseng, Yin-Chih Pan, Simon M. Sze, Tsung-Ming Tsai, Chih-Cheng Shih, J. C. Lou, Kuan-Chang Chang, Rui Zhang, Ting-Chang Chang, Tai-Fa Young, Yong-En Syu, Jung-Hui Chen
Publikováno v:
Applied Physics Letters. 102:253509
A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiOx layer structure, Zr:SiOx/porous SiOx structure outperforms from various aspects, including low operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30cfa36056926f6c5a8c0106a7d0c5f7
https://doi.org/10.1063/1.4812474
https://doi.org/10.1063/1.4812474
Autor:
Zhang, Rui, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui, Young, Tai-Fa, Shih, Chih-Cheng, Yang, Ya-Liang, Pan, Yin-Chih, Chu, Tian-Jian, Huang, Syuan-Yong, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Sze, Simon M
Publikováno v:
Nanoscale Research Letters; Dec2013, Vol. 8 Issue 1, p1-6, 6p
Autor:
Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Tseng, Bae-Heng, Shih, Chih-Cheng, Pan, Yin-Chih, Chen, Min-Chen, Pan, Jhih-Hong, Syu, Yong-En, Sze, Simon M.
Publikováno v:
Applied Physics Letters; 6/24/2013, Vol. 102 Issue 25, p253509, 4p, 1 Diagram, 4 Graphs
Autor:
Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Chen, Min-Chen, Yang, Ya-Liang, Pan, Yin-Chih, Chang, Geng-Wei, Chu, Tian-Jian, Shih, Chih-Cheng, Chen, Jian-Yu, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Tai, Ya-Hsiang, Sze, Simon M.
Publikováno v:
IEEE Electron Device Letters; May2013, Vol. 34 Issue 5, p677-679, 3p