Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yin Ku Chang"'
Publikováno v:
Thin Solid Films. 539:360-364
Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO 2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501eec3d33aa5cf74b0b94d37028c586
https://doi.org/10.1016/j.tsf.2013.05.087
https://doi.org/10.1016/j.tsf.2013.05.087
Publikováno v:
IEEE Electron Device Letters. 30:161-164
LaAlO3 is a promising candidate for gate dielectric of future VLSI devices. In this letter, n-channel metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric were fabricated, and the electron mobility degradation mechanisms wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa79a905e1a712f5f5b0ea3ddb0ad9b7
https://doi.org/10.1109/led.2009.2009554
https://doi.org/10.1109/led.2009.2009554
Publikováno v:
Integrated Ferroelectrics. 97:111-120
Metal-oxide-semiconductor (MOS) capacitors and transistors with Sm2O3 and Dy2O3 gate dielectrics were fabricated. The effective electron mobilities of Sm2O3-and Dy2O3-gated transistors were 211 and 251 cm2/V-s, respectively. The conduction mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d43d7ee90bf9fff38160d9d72934dbe
https://doi.org/10.1080/10584580802088892
https://doi.org/10.1080/10584580802088892
Publikováno v:
IEEE Electron Device Letters. 28:964-966
Metal-oxide-high-kappa dielectric-oxide-silicon capacitors and transistors are fabricated using HfO2 and Dy2O3 high-kappa dielectrics as the charge storage layer. The programming speed of Al/SiO2/Dy2O3/ SiO2/Si transistor is characterized by a DeltaV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc8be1dfcd61c05158e31f2f0c81a57a
https://doi.org/10.1109/led.2007.906797
https://doi.org/10.1109/led.2007.906797
Autor:
Chun-Heng Chen, Ming-Han Liao, Ingram Yin-Ku Chang, Pi-Chun Juan, Zingway Pei, Huey-Liang Hwang
Publikováno v:
ECS Meeting Abstracts. :252-252
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10205f864aeeae5e50bb232ebb28269d
https://doi.org/10.1149/ma2012-01/6/252
https://doi.org/10.1149/ma2012-01/6/252
Publikováno v:
Electrochemical and Solid-State Letters. 13:H73
In this work, Al/PbZr 0.53 Ti 0.47 O 3 /n + -polycrystalline silicon/Y 2 O 3 /Si capacitors and field-effect transistors were fabricated. The n + -polycrystalline silicon floating gate was used to reduce the depolarization field of the ferroelectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb6d4a45e5e5f4723abecc493ab71d75
https://doi.org/10.1149/1.3275961
https://doi.org/10.1149/1.3275961
Publikováno v:
Applied Physics Letters. 95:162902
In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the correspo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16091ea79e109d85783cd03f6d3e1306
https://doi.org/10.1063/1.3250242
https://doi.org/10.1063/1.3250242
Autor:
Ingram Yin-Ku Chang, Cheng-Li Lin, Shin-chun Ju, Main-gwo Chen, Jong-Hong Lu, Chuan-Hsi Liu, Pi-Chun Juan
Publikováno v:
Japanese Journal of Applied Physics. 48:05DA02
In this work, high-κ cerium zirconate (CeZrO4) was successfully fabricated by RF magnetron cosputtering with a postannealing temperature of 850 °C. The amount of Zr in CeO2 can be well controlled by adjusting the DC power of the Zr target. X-ray ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70c3aeacf1872a19f415af31e9115c5c
https://doi.org/10.1143/jjap.48.05da02
https://doi.org/10.1143/jjap.48.05da02
Autor:
Pi-Chun Juan, Main-gwo Chen, Chun-Heng Chen, Ingram Yin-Ku Chang, Sheng-wen You, Joseph Ya-min Lee
Publikováno v:
Journal of Applied Physics. 105:104512
LaAlO3 is a promising candidate of gate dielectric for future very large scale integration devices. In this work, metal-oxide-semiconductor capacitors and transistors with LaAlO3 gate dielectric were fabricated and the electron mobility degradation m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b63d97983b9d1d55771dfd547312d91
https://doi.org/10.1063/1.3129687
https://doi.org/10.1063/1.3129687
Publikováno v:
Applied Physics Letters. 94:142905
Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1a8bd57509c52ebbb39802d45a2bbf
https://doi.org/10.1063/1.3114403
https://doi.org/10.1063/1.3114403