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Autor:
Gaddam, Venkateswarlu, Dabas, Shaurya S., Gao, Jinghan, Spry, David J., Baucom, Garrett, Rudawski, Nicholas G., Yin, Tete, Angerhofer, Ethan, Neudeck, Philip G., Kim, Honggyu, Feng, Philip X. -L., Sheplak, Mark, Tabrizian, Roozbeh
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films i
Externí odkaz:
http://arxiv.org/abs/2410.17037
