Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Yiming Huai"'
Autor:
Bin Fang, Jiafeng Feng, Huadong Gan, Roger Malmhall, Yiming Huai, Rongxin Xiong, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, Zhongming Zeng
Publikováno v:
AIP Advances, Vol 6, Iss 12, Pp 125305-125305-7 (2016)
We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscil
Externí odkaz:
https://doaj.org/article/79fea37645df46a2a4137ca4ba195f72
Autor:
Zihui Wang, Yiming Huai, Longqian Hu, Xiaojie Hao, Zhiqiang Wei, Dongha Jung, Bing Yen, Jing Zhang, Kimihiro Satoh, Pengfa Xu, Woojin Kim, Lienchang Wang
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
With traditional embedded memories, such as eFlash and SRAM, facing major challenge of scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies as the preferred technology for both embedded flash and SRAM replacements. Havin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ed6ded252046d05108fca062c23dfb
https://doi.org/10.1109/imw48823.2020.9108144
https://doi.org/10.1109/imw48823.2020.9108144
Autor:
Jing Zhang, Dong Ha Jung, Hongxin Yang, Xiaojie Hao, Zihui Wang, Xiaobin Wang, Kimihiro Sato, Bing K. Yen, Yiming Huai, Pengfa Xu, Roger Klas Malmhall
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
Stackable 3D cross-point Spin transfer torque magnetic RAM (STT-MRAM) is one of the best candidates to replace DRAM and serve as storage class memory (SCM). For very high density and low cost STT-MRAM, stackable 3D cross-point STT-MRAM architecture r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec9f3d5628dd65a01a01c621db25f4c
https://doi.org/10.1109/imw.2018.8388833
https://doi.org/10.1109/imw.2018.8388833
Autor:
Zihui Wang, Huadong Gan, Yiming Huai, Hongxin Yang, Xiaobin Wang, Roger Klas Malmhall, Yuchen Zhou, Dong Ha Jung, Jing Zhang, Kimihiro Satoh, Xiaojie Hao, Bing K. Yen
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
To develop very high density STT-MRAM, 3D cross-point architecture is desirable, which requires a selector integrated with a pMTJ memory element. We present a two terminal bi-directional threshold switching selector based on doped-HfOx materials and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4977dcea062c4c2c47527263de447eef
https://doi.org/10.1109/iedm.2017.8268513
https://doi.org/10.1109/iedm.2017.8268513
Autor:
Zhitao Diao, Pakala, Mahendra, Panchula, Alex, Yunfei Ding, Apalkov, Dmytro, Lien-Chang Wang, Chen, Eugene, Yiming Huai
Publikováno v:
Journal of Applied Physics; 4/15/2006, Vol. 99 Issue 8, p08G510, 5p, 1 Black and White Photograph, 6 Graphs
Autor:
Yuchen Zhou, Jing Zhang, Kimihiro Satoh, Xiaobin Wang, Yiming Huai, Dongha Jun, Xiaojie Hao, Zihui Wang, Huadong Gan, Bing K. Yen
Publikováno v:
Spintronics IX.
Fast operation speed, high retention and high reliability are the most attractive features of the spin transfer torque magnetic random access memory (STT-MRAM) based upon perpendicular magnetic tunneling junction (pMTJ). For state-of-the-art pMTJ STT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cdcfa45c80783f88937d2082bafce56
https://doi.org/10.1117/12.2238311
https://doi.org/10.1117/12.2238311
Autor:
U. Chandrasekhar, Y. Zhou, H. Gan, X. Hao, Yiming Huai, X. Wang, D. Jung, J. Zhang, Z. Wang, K. Satoh, E. Abedifard, K. Moon, B. K. Yen
Publikováno v:
2016 International Conference of Asian Union of Magnetics Societies (ICAUMS).
We report industry's first 64Mb perpendicular MTJ (pMTJ) spin transfer torque magnetic random access memory (STT-MRAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de4fe1cd673f363d8a83816ded54231
https://doi.org/10.1109/icaums.2016.8479744
https://doi.org/10.1109/icaums.2016.8479744
Autor:
Pengfa Xu, Cory Wang, Nirav Pakala, Mahendra Pakala, Jing Zhang, Kimihiro Satoh, Wang Rongjun, Huadong Gan, Zihui Wang, Lin Xue, Xiaojie Hao, Yuchen Zhou, Yiming Huai, Roger Klas Malmhall, Dongha Jung, Bing K. Yen
Publikováno v:
Applied Physics Letters. 112:092402
High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (∼10 nm) with a tunnel magnetoresistance (TMR) ratio ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c7836f6428f5ce6cc946c4b77b5e51
https://doi.org/10.1063/1.5018874
https://doi.org/10.1063/1.5018874
Publikováno v:
Journal of Magnetism and Magnetic Materials. 304:88-92
Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density ( J c0 ) down to 2 MA/cm 2 , which are the best kno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::214fa1217b5f902b9d93b49b09256071
https://doi.org/10.1016/j.jmmm.2006.04.016
https://doi.org/10.1016/j.jmmm.2006.04.016
Autor:
Lien−Chang Wang, Mahendra Pakala, Yunfei Ding, Dmytro Apalkov, Alex Panchula, Zhitao Diao, Yiming Huai, Eugene Chen
Publikováno v:
Japanese Journal of Applied Physics. 45:3835-3841
We present a systematic study of spin transfer switching in magnetic tunneling junctions (MTJs). Several ways to decrease the switching current density through material and stack engineering and MTJ element shape optimization are explained in detail.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333162e211ca8d2f3842af47a577e867
https://doi.org/10.1143/jjap.45.3835
https://doi.org/10.1143/jjap.45.3835