Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Yil Wook Kim"'
Publikováno v:
ECS Transactions. 25:173-178
Thin silicon dioxide films were obtained by low-temperature plasma oxidation. Plasma oxidation was performed using a specially-designed new plasma source, called dual rotated spiral antenna (DuRoSA) system. This new plasma source produced high densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc2dffc8ba99bf218ee6e4e83ee1d8af
https://doi.org/10.1149/1.3206617
https://doi.org/10.1149/1.3206617
Publikováno v:
Korean Journal of Chemical Engineering. 26:824-827
Deposition of N-doped poly-Si films from SiH4 and NH3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a237cd5f1cb43dcbfb4b854e5054c3
https://doi.org/10.1007/s11814-009-0137-3
https://doi.org/10.1007/s11814-009-0137-3
Autor:
Sung Kil Cho, Hyung Su Choe, Dong Keun Lee, Pyung Yong Um, Hai Won Kim, Sang Ho Woo, Chang-Koo Kim, Yil Wook Kim
Publikováno v:
ECS Transactions. 11:601-606
Polysilicon (poly-Si) is mainly used as gate material for metal-oxide-semiconductor (MOS) based devices. As the dimensions of the MOS based devices keep shrinking, their performance depends critically on the film properties such as surface morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be8080e55ae097012085a3057a964701
https://doi.org/10.1149/1.2779594
https://doi.org/10.1149/1.2779594
Publikováno v:
Microelectronics Journal. 38:125-129
An etching of a SiO2 contact hole with a diameter of 0.19μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0cb1c907ea3a3eed267b81419a2b3e8
https://doi.org/10.1016/j.mejo.2006.09.002
https://doi.org/10.1016/j.mejo.2006.09.002
Publikováno v:
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p30-33, 4p
Publikováno v:
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 38:922-928
An Al dual damascene process for the metallization of sub-100 nm dynamic random access memory devices was performed, and the effects of wafer cleaning method on the damascene structures and their electrical properties were investigated. Interconnect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b2a85f378060f264bc62da5986ef3d
https://doi.org/10.1252/jcej.38.922
https://doi.org/10.1252/jcej.38.922
Publikováno v:
Journal of Applied Physics. 93:745-749
Material characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si (100) substrates were investigated to explain their tunable electrical properties. The films obtained without heating had polycr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6f278ee2215e9865703ba28e237439
https://doi.org/10.1063/1.1525044
https://doi.org/10.1063/1.1525044
Autor:
Choul-Ho Lim, Kyung-youl Min, Yil-Wook Kim, Kwang-Jun Cho, Soun-Young Lee, Sung Heo, Ho-Joung Kim, Yoon-Baek Park, Tae-Kwon Lee, Moon-Keun Ichon Lee
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:916-921
The SrBi2Ta2O9 (SBT) films studied for this report were prepared by metalorganic decomposition. The SBT thin film, which belongs to a Bi-layered perovskite structure where double Ta–O octahedron layers are sandwiched between (Bi2O2)2+ layers, was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea324fd1ef645c276017e8909813993
https://doi.org/10.1116/1.1354601
https://doi.org/10.1116/1.1354601
Publikováno v:
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).
Chemical Mechanical Planarization (CMP), a new technology have developed at IBM since the early 1980's, has remain fruitful and applicable to the global planarization of multilevel metallization of logic devices and interconnection of memory devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ab6909a1aca72eca43bc7dc9552830
https://doi.org/10.1109/isdrs.2001.984431
https://doi.org/10.1109/isdrs.2001.984431
Publikováno v:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V.
A chemically assisted physical etching has been developed for the patterning of the Pt electrode with Cl 2 /Ar Plasma. Cl 2 plasma performs a very special role which leads to a fence free Pt etching with the highly steep profile. It was found that Pt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca81f749cc7e7bb80de4a14710deb0b6
https://doi.org/10.1117/12.361306
https://doi.org/10.1117/12.361306