Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yijun, Weng"'
Band alignment control in a blue phosphorus/C2N van der Waals heterojunction using an electric field
Autor:
Zifeng Xie, Zhihui Zhang, Yijun Weng, Tingting Guo, Jibin Fan, Li Duan, Yan Zhang, Jian Liu, Zhengdi Zha, Lei Ni, Xing Wei, Ye Tian
Publikováno v:
Physical Chemistry Chemical Physics. 22:5873-5881
Well-controlled band engineering of a blue phosphorus/C2N van der Waals (vdW) heterojunction is investigated by density functional theory (DFT) calculations. The heterojunction has a natural type-II band alignment with a direct band gap value of 1.51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf80394a3f70d43add11080a542c379c
https://doi.org/10.1039/c9cp06696a
https://doi.org/10.1039/c9cp06696a
Autor:
Xing Wei, Jian Liu, Ye Tian, Yijun Weng, Jibin Fan, Ting Li, Zhu Wang, Tingting Guo, Yan Zhang, Zhengdi Zha, Li Duan, Lei Ni
Publikováno v:
Physical Chemistry Chemical Physics. 22:9647-9655
In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bafd67fb5c936f7336c8ac16b2fc5608
https://doi.org/10.1039/d0cp00291g
https://doi.org/10.1039/d0cp00291g
Autor:
Zhihui, Zhang, Zifeng, Xie, Jian, Liu, Ye, Tian, Yan, Zhang, Xing, Wei, Tingting, Guo, Lei, Ni, Jibin, Fan, Yijun, Weng, Zhengdi, Zha, Li, Duan
Publikováno v:
Physical chemistry chemical physics : PCCP. 22(10)
Well-controlled band engineering of a blue phosphorus/C2N van der Waals (vdW) heterojunction is investigated by density functional theory (DFT) calculations. The heterojunction has a natural type-II band alignment with a direct band gap value of 1.51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::cd0f366bad3c76ffa4b82face1c8043e
https://pubmed.ncbi.nlm.nih.gov/32108190
https://pubmed.ncbi.nlm.nih.gov/32108190
Autor:
Ting Li, Yan Zhang, Zhengdi Zha, Ye Tian, Ru Zhang, Jian Liu, Jibin Fan, Yijun Weng, Li Duan, Tingting Guo, Lei Ni, Xing Wei
Publikováno v:
Applied Surface Science. 528:146782
The electronic characteristics of the AlN/InSe van der Waals heterostructure (vdWH) were investigated via employing density functional theory calculations. The vdWH has an indirect band gap with a connatural interlaced-gap type-II band alignment, so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b0d09cc8384f6c465bf8b781d9cc2c1
https://doi.org/10.1016/j.apsusc.2020.146782
https://doi.org/10.1016/j.apsusc.2020.146782
Autor:
Yifan Jia, Tingting Guo, Yan Zhang, Ye Tian, Ting Li, Yijun Weng, Zhengdi Zha, Xing Wei, Lei Ni, Jibin Fan, Li Duan, Jian Liu
Publikováno v:
Journal of Alloys and Compounds. 832:154965
This article aims to investigate the electronic properties of GaTe/CdS heterostructure using first-principles calculations based on density functional theory (DFT). A direct band gap of 0.804 eV and type-II band alignment are formed at the GaTe/CdS v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c71cdfd5ed4013d75ec77d77df9c199
https://doi.org/10.1016/j.jallcom.2020.154965
https://doi.org/10.1016/j.jallcom.2020.154965
Autor:
Zhu Wang, Yan Zhang, Xing Wei, Tingting Guo, Jibin Fan, Lei Ni, Yijun Weng, Zhengdi Zha, Jian Liu, Ye Tian, Ting Li, Li Duan
Publikováno v:
Physical Chemistry Chemical Physics (PCCP); 5/7/2020, Vol. 22 Issue 17, p9647-9655, 9p