Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yii-Cheng Lin"'
Autor:
Katherine Sieg, Christopher R. Carr, Karsten Schaefer, M. F. Chen, Christopher L. Borst, David Skilbred, Jong-heun Lim, Kosta Culafi, Milo Tallon, Norman Fish, Frank Robertson, Chulgi Song, John Hagwood, Anne-Sophie Larrea, Angelo Alaestante, Mark Kelling, ChungJu Yang, Denis Sullivan, WenLi Collision, Nithin Yathapu, Hsi-Wen Liu, Yii-Cheng Lin, Cheng-Chung Chien, Erin Fria, Regina Swaine, Gerard Stapf, Dan Franca, BumKi Moon, K. K. W. Lee, Bruce Gall, Jamie Prudhomme, Yu-Lieh Fu, Alexander Bialy, Stock Chang, Shannon Dunn, Michael Bryant, Lin Pinyen, Huey-Ming Wang, Joe Maniscalco, Richard Conti, Rand Cottle, Barry Wang, Steven Smith, Sun-OO Kim
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
At 450mm wafer area, the first Cu BEOL module process was demonstrated with a single damascene structure using low-k ILD, TiN metal hard mask and guided 20nm half-pitched lamella BCP DSA patterning. It showed the potential opportunities, technical fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f5a6641fe5a8a4871bd779ed63e8be
https://doi.org/10.1109/iitc-amc.2016.7507638
https://doi.org/10.1109/iitc-amc.2016.7507638
Autor:
Michael Goss, Hiroaki Takikawa, Min-Joon Park, Chih-Ming Sun, Jun Belen, Mark Kelling, Lin Pinyen, James Paris, Lucy Chen, George Stojakovic, Troy S. Detrick, Yii-Cheng Lin, Shannon Dunn, Wenli Collison, Norman Fish
Publikováno v:
SPIE Proceedings.
In the Global 450mm Equipment Development Consortium (G450C), a 193i guided directed self-assembly (DSA) pattern has been used to create structures at the 14nm node and below. The first guided DSA patterned wafer was ready for etch process developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d8e98e060f2cfd4a3053891458b1c3
https://doi.org/10.1117/12.2218537
https://doi.org/10.1117/12.2218537
Autor:
H. A. Teng, Yii-Cheng Lin, M. F. Chen, Wen-Chih Chiou, Cheng-Hsiang Hsieh, Doug C. H. Yu, J. H. Chang, Shang-Yun Hou, S. B. Jan, C.H. Chang, Kuo-Nan Yang, S.P. Jeng, T.J. Wu
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
An orthotropic stress field was observed in the vicinity of the Cu-filled TSV on nominal (100) silicon substrate from both μRaman measured data and validated FEM result. The orthotropic elastic behavior of silicon in the (100) plane is believed to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21efb721ff8bc076b7418ab57de143ee
https://doi.org/10.1109/iitc.2011.5940276
https://doi.org/10.1109/iitc.2011.5940276