Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Yihwan, Kim"'
Publikováno v:
PLoS ONE, Vol 13, Iss 1, p e0190266 (2018)
Synechococcus is an important photosynthetic picoplankton in the temperate to tropical oceans. As a photosynthetic bacterium, Synechococcus has an efficient mechanism to adapt to the changes in salinity and light intensity. The analysis of the distri
Externí odkaz:
https://doaj.org/article/b41f7746f853411c9b4cceb9ed07fdc8
Autor:
Jung Yeon Won, Jinyong Kim, Tae-Gon Kim, Sungho Lee, Jin-Bum Kim, Seongpyo Hong, Hyung-Ik Lee, Hyoungsub Kim, Ilgyou Shin, Hoo-Jeong Lee, Seongheum Choi, Ki-Hyun Hwang, Yihwan Kim, Taejin Park
Publikováno v:
Journal of Alloys and Compounds. 788:1013-1020
Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ac1bd392c414c03e234d57aa507ea1
https://doi.org/10.1016/j.jallcom.2019.02.307
https://doi.org/10.1016/j.jallcom.2019.02.307
Autor:
Si Young Lee, Jin-Bum Kim, Yihwan Kim, Ki-Hyun Hwang, Sang-Jin Hyun, Taejin Park, Hyoungsub Kim, Chul-Sung Kim, Seounghoon Lee
Publikováno v:
IEEE Transactions on Electron Devices. 66:389-394
The importance of optimizing the millisecond annealing (MSA) temperature for Pt-doped NiSi ( ${\mathrm {Ni}}_{{1}-{x}}$ Pt x Si) contact formation was highlighted by implementing and characterizing the ${\mathrm {Ni}}_{{1}-{x}}$ Pt x Si films in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f2a677799e9ee44afedd718367b012
https://doi.org/10.1109/ted.2018.2878871
https://doi.org/10.1109/ted.2018.2878871
Autor:
Yun Jae Lee, Bosung Kim, Hyoungsub Kim, Hyung-Ik Lee, Joong Jung Kim, Seongpyo Hong, Younheum Jung, Taejin Park, Jinyong Kim, Sungho Lee, Jung Yeon Won, Eunha Lee, Yihwan Kim, Cheol-Woong Yang, Seongheum Choi, Ki-Hyun Hwang, Jin-Bum Kim
Publikováno v:
Journal of Alloys and Compounds. 771:124-130
Pt-doped NiSi‒NiSi2 thin films in a uniform lamellar structure with a periodicity on the scale of a few tens of nanometers were formed on Si(001) substrates using a continuous laser scanning process. When the Pt-doped NiSi film was melted at high t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e943abf928e108f3250b09635c167425
https://doi.org/10.1016/j.jallcom.2018.08.257
https://doi.org/10.1016/j.jallcom.2018.08.257
Autor:
Hyoungsub Kim, Jin-Bum Kim, Yoo Jeong-Ho, Ilgyou Shin, Jung-Hwa Kim, Yihwan Kim, Seongheum Choi, Ki-Hyun Hwang, Jinyong Kim, Hyangsook Lee, Taejin Park, Eunha Lee, Seok-Hoon Kim
Publikováno v:
Microelectronic Engineering. 205:14-19
The objective of this study was to determine detailed microstructure of a Ni1–xPtxSi film formed via a melting/quenching process using high temperature laser annealing on a Si(001) substrate. The orthorhombic Ni1–xPtxSi film was found to be able
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4a3218f9d36eaa510d6b511b28bb12
https://doi.org/10.1016/j.mee.2018.11.009
https://doi.org/10.1016/j.mee.2018.11.009
Autor:
Seung Heon Shin, Do-Kwyn Kim, Dong-Suk Shin, Ji-Min Baek, Dae-Hyun Kim, Jung Ho Park, Seung Ryul Lee, Jung-taek Kim, Yihwan Kim, Jung-Hee Lee, Jieon Yoon, Sang-Moon Lee, Woo-Bin Song, Sun-jung Kim, Seung-Woo Son, Tae-Woo Kim
Publikováno v:
IEEE Electron Device Letters. 38:724-727
In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef7cc8eb90f9eece3ecdc118190bb77
https://doi.org/10.1109/led.2017.2695652
https://doi.org/10.1109/led.2017.2695652
Autor:
Won-Woong Kim, O. I. Kwon, D. H. Chang, Yong-Jae Kim, Sun-Kyu Hwang, J. W. Kye, E. S. Jung, Yihwan Kim, G. W. Lee, Bum-seok Seo, Ki-Hyun Hwang, I. H. Kim, Sangwoo Pae, Yoon-Jong Song, Kwan-Heum Lee, Seong-Geon Park, J.H. Park, N. Y. Ji, Sung-hee Han, Gitae Jeong, Byoung-Jae Bae, J. H. Lee, Chan-kyung Kim, Artur Antonyan, H. K. Kang, H. T. Jung, J. H. Bak, Gwan-Hyeob Koh, Y. Ji
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
High density 1Gb embedded STT-MRAM in 28nm FDSOI technology was successfully demonstrated. Based on the highly reliable and manufacturable eMRAM technology, high yield over 90% was achieved at the operating temperature from −40°c to 105°c with sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5816c7c6ccd7a5aa8d0814c9638d54b2
https://doi.org/10.1109/iedm19573.2019.8993551
https://doi.org/10.1109/iedm19573.2019.8993551
Autor:
Hart, John, Adam, Thomas, Yihwan Kim, Yi-Chiau Huang, Reznicek, Alexander, Hazbun, Ramsey, Gupta, Jay, Kolodzey, James
Publikováno v:
Journal of Applied Physics; 3/7/2016, Vol. 119 Issue 9, p093105-1-093105-6, 6p, 1 Color Photograph, 2 Charts, 5 Graphs
Autor:
Hyangsook Lee, Taeho Cha, Hyoungsub Kim, Hyung-Ik Lee, Seongheum Choi, Jinyong Kim, Chul-Sung Kim, Sun-jung Kim, Yihwan Kim, Jin-Bum Kim, Eunha Lee, Jung Yeon Won, Kee-Won Kwon, Sang-Jin Hyun, Taejin Park, Dong-Suk Shin
Publikováno v:
ACS Applied Materials & Interfaces. 9:566-572
To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25167f37bc95b5d3a09bde09500d0675
https://doi.org/10.1021/acsami.6b12968
https://doi.org/10.1021/acsami.6b12968
Publikováno v:
PLoS ONE, Vol 13, Iss 1, p e0190266 (2018)
PLoS ONE
PLoS ONE
Synechococcus is an important photosynthetic picoplankton in the temperate to tropical oceans. As a photosynthetic bacterium, Synechococcus has an efficient mechanism to adapt to the changes in salinity and light intensity. The analysis of the distri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28a8b0fcab66588c5045ffbf7e6ebf6d
http://europepmc.org/articles/PMC5749766?pdf=render
http://europepmc.org/articles/PMC5749766?pdf=render