Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yih-Shan Yang"'
Autor:
Shuo-Nan Hung, Meng-Fan Chang, Jo-Yu Hsu, Yih-Shan Yang, Chi-Yu Hung, Yen-Hao Shih, Tzung Shen Chen, Tzu-Neng Lai, Yao-Jen Kuo, Chun-Hsiung Hung, Shin-Jang Shen, Chung Kuang Chen, Ti-Wen Chen, Chih-Yuan Lu, Hang-Ting Lue, Shih-Lin Huang
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:1491-1501
3D vertical-gate (3DVG) NAND flash is a promising candidate for next-generation high-density nonvolatile memory. Cross-layer process variation renders 3DVG NAND susceptible to decreased speeds, yield, and reliability. This can be attributed to (a) cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96693ff9aaae9a510b4e2d9674b72b7
https://doi.org/10.1109/jssc.2015.2413841
https://doi.org/10.1109/jssc.2015.2413841
Autor:
Chia-Chen Kuo, Chen-Hsin Lien, Heng-Yuan Lee, Ming-Jinn Tsai, Meng-Fan Chang, Shyh-Shyuan Sheu, Frederick T. Chen, Tzu-Kun Ku, Keng-Li Su, Yu-Sheng Chen, Yih-Shan Yang, Ku-Feng Lin, Ming-Jer Kao, Pi-Feng Chiu, Che-Wei Wu
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:878-891
ReRAM is a promising next-generation nonvolatile memory (NVM) with fast write speed and low-power operation. However, ReRAM faces two major challenges in read operations: 1) low read yield due to wide resistance distribution and 2) the requirement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b2a028d8b86979d82e61db8328ea160
https://doi.org/10.1109/jssc.2012.2230515
https://doi.org/10.1109/jssc.2012.2230515
Autor:
Che-Wei Wu, Han-Wen Hu, Wei-how Chen, Meng-Fan Chang, Yi-Lun Lu, Jui-Yu Hung, Shin-Jang Shen, Yan-Bing Jhang, Yih-Shan Yang
Publikováno v:
2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3ff6fdf10e2246a1531d5d245970c2e
https://doi.org/10.1109/edssc.2016.7785278
https://doi.org/10.1109/edssc.2016.7785278
Autor:
Chih-Sheng Lin, Chi-Yu Hung, Shyh-Shyuan Sheu, Meng-Fan Chang, Jia-Min Shieh, Shin-Jang Shen, Chang-Hong Shen, Yih-Shan Yang, Hang-Ting Lue, Yao-Jen Kuo, S.-N. Hung, Wang-Ying Lu, Ming-Pin Chen
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In heterogeneous nonvolatile 3D-ICs, nonvolatile memory modules are used to enable reliable computing and smart power on-off management as a means of suppressing system standby current. This paper discusses the challenges caused by supply noise varia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37568bc76f524b1014f83f648b290261
https://doi.org/10.1109/edssc.2015.7285064
https://doi.org/10.1109/edssc.2015.7285064
Autor:
Che-He Lin, Chen-Hsin Lien, Keng-Li Su, Shyh-Shyuan Sheu, Pei-Yi Gu, Kuo-Hsing Cheng, Pei-Chia Chiang, Heng-Yuan Lee, Chia-Chen Kuo, Meng-Fan Chang, Ming-Jinn Tsai, Che-Wei Wu, Ku-Feng Lin, Yih-Shan Yang, Frederick T. Chen, Sum-Min Wang, Tzu-Kun Ku, Hsin-Tun Wu, Ming-Jer Kao, Wen-Pin Lin, Pi-Feng Chiu, Yu-Sheng Chen
Publikováno v:
ISSCC
Several emerging nonvolatile memories (NVMs) including phase-change RAM (PCRAM) [1–3], MRAM [4–5], and resistive RAM (RRAM) [6–8] have achieved faster operating speeds than embedded Flash. Among those emerging NVMs, RRAM has advantages in faste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceab8f31a3c0195e9eec1b5702d6eca1
https://doi.org/10.1109/isscc.2011.5746281
https://doi.org/10.1109/isscc.2011.5746281
Autor:
Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Pei-Yi Gu, Sum-Min Wang, Chen, F.T., Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku
Publikováno v:
2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2011, p200-202, 3p