Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yih-Der Guo"'
Autor:
Po Chun Liu, Jul Chin Yeh, Jenq-Dar Tsay, Yu Hsiang Chang, Wen Yu Liu, Chih-Ming Lai, Hsin Hsiung Huang, Yih-Der Guo
Publikováno v:
physica status solidi c. 4:2231-2235
A freestanding Gallium Nitride bulk is obtained without using laser lift-off technology. Two techniques such as mask-less ELOG and air-bridge structure are applied on patterned substrate. A self-separated result is successfully demonstrated by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f100bdd26e23bbdbbec6680a34834aae
https://doi.org/10.1002/pssc.200674733
https://doi.org/10.1002/pssc.200674733
Efficiency enhancement of 400 nm violet LEDs utilizing island‐like GaN thick film by HVPE technology
Autor:
Wen-Yueh Liu, Michael Heuken, Shyi-Ming Pan, Yih-Der Guo, Jenq-Dar Tsay, Jing-Mei Wang, Po Chun Liu, Liang-Wen Wu
Publikováno v:
physica status solidi c. 4:49-52
In this study, we develop a novel way to fabricate InGaN/GaN LED chips with special shape for improving the output power. Crack-free shaped GaN islands were first prepared on c-axis sapphire substrate by using HVPE selective area growth. By doing so,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8ee1ab7937381596e1faa64f7c4f1e
https://doi.org/10.1002/pssc.200673566
https://doi.org/10.1002/pssc.200673566
Publikováno v:
Journal of Electroceramics. 13:839-846
This paper studies the influence of growth temperatures in the range 825 to 1050_∘C on the surface morphologies of GaN crystals grown on a SiO2 dot-patterned substrate using Epitaxy Lateral Overgrowth (ELO) and Hydride Vapor Phase Epitaxy (HVPE) te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5ead2b3f07cc09452cac3033e535035
https://doi.org/10.1007/s10832-004-5201-0
https://doi.org/10.1007/s10832-004-5201-0
Autor:
Jenn-Fang Chen, Chuli Chao, Ching Hsueh Chiu, Hsi-Hsuan Yen, Shun-Jen Cheng, Ching-Hua Chiu, Bo-Chun Chen, Yih-Der Guo, Yen-Hsiang Fang, Hao-Chung Kuo, Zhen-Yu Li, Rong Xuan, Chien-Chung Lin
Publikováno v:
IEEE Photonics Technology Letters. 23:798-800
Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture a freestanding GaN (FS-GaN) substrate with threading dislocation densities down to ~ 107 cm-2. In this letter, we report InGaN/GaN multiple-quantum-well light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77e53bf69a493c343d504960a05f167
https://doi.org/10.1109/lpt.2011.2134081
https://doi.org/10.1109/lpt.2011.2134081
Publikováno v:
ECS Meeting Abstracts. :586-586
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b9b343d0ce8f3cdb4a1bf9f32c398da
https://doi.org/10.1149/ma2005-01/13/586
https://doi.org/10.1149/ma2005-01/13/586
Publikováno v:
Journal of Electroceramics; Jul2004, Vol. 13 Issue 1-3, p839-846, 8p