Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yifang Hong"'
Autor:
Ying Ma, Lin Shi, Liang Chen, Cai Chen, Yifang Hong, Hua Qin, Xiaodong Zhang, Yi Cui, Hongzhen Lin, Zhiqun Cheng, Fan Zhang, Linfeng Mao, Yong Cai
Publikováno v:
Nanomaterials, Vol 14, Iss 14, p 1211 (2024)
AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear. This
Externí odkaz:
https://doaj.org/article/348a2d453b4e430a82d77f1d4168f8a5
Publikováno v:
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).
Autor:
Ying Ma, Liang Chen, Zhihua Dong, Yifang Hong, Yang Xiao, Yijie Xin, Bin Zhang, Hua Qin, Ting Zhang, Xiaodong Zhang, Guohao Yu, Zhiqun Cheng, Lingfeng Mao, Yong Cai
Publikováno v:
Electronics. 12:1809
This letter reports the phenomenon of current drops in an AlGaN/GaN heterojunction with CF4 plasma treated in a polar gas ambient. Ungated AlGaN/GaN HEMT with CF4 plasma treatment was tested in ethanol, acetonitrile, and an acetic acid gas ambient, a