Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yidir Androussi"'
Publikováno v:
Philosophical Magazine
Philosophical Magazine, Taylor & Francis, 2007, 87 (10), pp.1531-1543. ⟨10.1080/14786430601055387⟩
Philosophical Magazine, Taylor & Francis, 2007, 87 (10), pp.1531-1543. ⟨10.1080/14786430601055387⟩
International audience; A finite-element program has been developed to model strain relaxation in the case of epitaxial Si1-xGex / Si coherent quantum dots either with or without compositional inhomogeneities. The resulting elastic displacement field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f748fa5e75fe5dae46bfb9d7ebb4e51
https://doi.org/10.1080/14786430601055387
https://doi.org/10.1080/14786430601055387
Autor:
Dimitris Pavlidis, Yidir Androussi, Didier Decoster, David Troadec, Arnaud Stolz, Eunjung Cho, Elhadj Dogheche
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.161903. ⟨10.1063/1.3582055⟩
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩
Applied Physics Letters, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.161903. ⟨10.1063/1.3582055⟩
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩
Applied Physics Letters, 2011, 98, pp.161903-1-3. ⟨10.1063/1.3582055⟩
International audience; The waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a310184eacd72933eee8856ee743c872
https://hal.archives-ouvertes.fr/hal-01264146
https://hal.archives-ouvertes.fr/hal-01264146
Autor:
Didier Decoster, Elhadj Dogheche, Jinghua Teng, Anisha Gokarna, Eric Dumont, Soo Jin Chua, A. Gauthier-Brun, Yidir Androussi, Wendi Liu
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2010, 96 (19), pp.191909. ⟨10.1063/1.3425761⟩
Applied Physics Letters, American Institute of Physics, 2010, 96, pp.191909-1-3. ⟨10.1063/1.3425761⟩
Applied Physics Letters, 2010, 96 (19), pp.191909. ⟨10.1063/1.3425761⟩
Applied Physics Letters, American Institute of Physics, 2010, 96, pp.191909-1-3. ⟨10.1063/1.3425761⟩
We present comparative investigations of single phase InxGa1−xN alloys for a varying In content (x=0.07 to 0.14) grown by metal organic chemical vapor deposition (MOCVD) technique. While the composition was determined using secondary ion mass spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38635fc77b7ff0b367a0c0f39290dae6
https://hal.science/hal-00549024/file/Gokarna_2010_1.3425761.pdf
https://hal.science/hal-00549024/file/Gokarna_2010_1.3425761.pdf
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.016102-1-3. ⟨10.1063/1.3275872⟩
Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩
Journal of Applied Physics, 107(1):016102, 016102-1/3. American Institute of Physics
Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.016102-1-3. ⟨10.1063/1.3275872⟩
Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩
Journal of Applied Physics, 107(1):016102, 016102-1/3. American Institute of Physics
The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecb080205324969855ca5574b3a16ac5
https://doi.org/10.1063/1.3275872
https://doi.org/10.1063/1.3275872