Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yicheng Pei"'
Publikováno v:
Micromachines, Vol 15, Iss 6, p 665 (2024)
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, i
Externí odkaz:
https://doaj.org/article/40637d26fabb41cc93efc15eb20d7a8c
Publikováno v:
Micromachines, Vol 15, Iss 5, p 600 (2024)
In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot wall chemical vapor deposition reactor. Comparing C3H8 and C2H4 as C sources, the sample grown with C2H4 exhibited a slower growth rate an
Externí odkaz:
https://doaj.org/article/7aa12f32baaf4b8183a4df427364d909
Autor:
Shangyu Yang, Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Yang Zhang, Xingfang Liu
Publikováno v:
Crystals, Vol 13, Iss 8, p 1165 (2023)
The growth of 6-inch In0.485Ga0.515P has been examined in this study. The effects of growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate, and crystal quality have been systematically investigated and discussed
Externí odkaz:
https://doaj.org/article/159a5117a9ca412582f69629ad8c1122
Publikováno v:
Crystals, Vol 13, Iss 7, p 1056 (2023)
In this study, a special triangular defect (TD) was identified on 4H-SiC epitaxial wafers. The morphology and composition characteristics of these special TDs were revealed by Raman, atomic force microscope (AFM), and scanning electron microscope (SE
Externí odkaz:
https://doaj.org/article/b53cafb9c6404b589dea683f99d6a726
Autor:
Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, Xingfang Liu
Publikováno v:
Crystals, Vol 13, Iss 7, p 1123 (2023)
In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels. With an increase in the source
Externí odkaz:
https://doaj.org/article/f2e77bbff15845baa5d04d09ba7facd6
Publikováno v:
Crystals, Vol 13, Iss 6, p 935 (2023)
In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N2 flow r
Externí odkaz:
https://doaj.org/article/1d1b14cb7ea742bf8d214f340966afeb
Autor:
Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, Xingfang Liu
Publikováno v:
RSC Advances; 2024, Vol. 14 Issue 23, p16574-16583, 10p
Publikováno v:
Crystals; Volume 13; Issue 7; Pages: 1056
In this study, a special triangular defect (TD) was identified on 4H-SiC epitaxial wafers. The morphology and composition characteristics of these special TDs were revealed by Raman, atomic force microscope (AFM), and scanning electron microscope (SE
Publikováno v:
Crystals; Volume 13; Issue 6; Pages: 935
In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N2 flow r
Publikováno v:
Vacuum. 213:112074