Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Yi-Yun Yang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 969-972 (2019)
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and
Externí odkaz:
https://doaj.org/article/91bfabc34f474cfeb3a50c2a484d8f87
Autor:
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1187-1191 (2018)
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures. The stacked nanosheets device structure, fabrication, and electrical char
Externí odkaz:
https://doaj.org/article/71a2d47776ec47248171195c9720135f
Autor:
Yi-Yun Yang, Ching-Nung Yang
Publikováno v:
IEEE Transactions on Circuits and Systems for Video Technology. 31:2465-2479
A ( $k$ , $n$ ) visual cryptographic scheme (VCS) shares a secret image into $n$ shadow images that are distributed over $n$ involved participants. When $k$ participants stack their shadow images, the secret is revealed. The secret image of VCS is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c5ad30b8f260f784e02a57d2210ae0
https://doi.org/10.1109/tcsvt.2020.3017126
https://doi.org/10.1109/tcsvt.2020.3017126
Autor:
Yu-Hsien Lin, Yung-Chun Wu, Hsin-Chiang You, Chun-Hao Chen, Ping-Hua Chen, Yi-He Tsai, Yi-Yun Yang, K. S. Chang-Liao
Publikováno v:
Energies, Vol 7, Iss 6, Pp 3653-3663 (2014)
Aluminum oxide (AlOx) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlOx) was deposited on the surface of a wafer; the electric field near the surface of w
Externí odkaz:
https://doaj.org/article/4e63091359d54a9e841dc574bed47c26
Publikováno v:
Multimedia Tools and Applications. 79:25657-25677
Existing secret image sharing (SIS) schemes with steganography and authentication are only suitable for uncompressed grayscale images. To make it more practical, a scheme for sharing and hiding a secret image in color palette images with authenticati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192da8bd73a3286d91ca131e800a99d8
https://doi.org/10.1007/s11042-020-09253-2
https://doi.org/10.1007/s11042-020-09253-2
Publikováno v:
Journal of Visual Communication and Image Representation. 59:550-562
Recently, Yang et al. introduced a ( k , n ) approach called Reversible Absolute moment block truncation coding Visual Cryptography Scheme (RAVCS) (Yang et al., 2017) to conceal a secret image into n AMBTC shares. However, a large number of reference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f45e14260e3b11ddaa5c7f5e7f8eeca2
https://doi.org/10.1016/j.jvcir.2019.02.008
https://doi.org/10.1016/j.jvcir.2019.02.008
Autor:
Yu-Hsien Lin1 yhlin@nuu.edu.tw, Yi-Yun Yang1 yun70076@gmail.com
Publikováno v:
Materials (1996-1944). 2015, Vol. 8 Issue 8, p5112-5120. 9p. 1 Diagram, 1 Chart, 4 Graphs.
Publikováno v:
Journal of Information Security and Applications. 51:102452
A hybrid approach for enhancing the recovered image quality in Shamir’s polynomial based secret image sharing (SIS) is proposed in this paper. To remain computational efficiency, simple modular arithmetic is still used. The fundamental operation in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be373b89c0ad7da768fa0f823595d83
https://doi.org/10.1016/j.jisa.2020.102452
https://doi.org/10.1016/j.jisa.2020.102452
Autor:
Yi-Yun Yang
Publikováno v:
The Open Materials Science Journal. 9:56-59
The exchange bias phenomena of phase-separated Nd1-xSrxCoO3(x=0.10, 0.15) samples were systematically investigated in this paper. The samples were prepared using conventional solid state reaction method. When the NdSrCoO samples cooled down in magnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a711cc8e4c00eeb35cf03e4132bebad1
https://doi.org/10.2174/1874088x01509010056
https://doi.org/10.2174/1874088x01509010056
Autor:
Yi-Yun Yang, Yu-Hsien Lin
Publikováno v:
Materials, Vol 8, Iss 8, Pp 5112-5120 (2015)
Materials; Volume 8; Issue 8; Pages: 5112-5120
Materials
Materials; Volume 8; Issue 8; Pages: 5112-5120
Materials
This paper presents a novel TaN-Al2O3-HfSiOx-SiO2-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiOx/SiO2 interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16f59e1291a749eedb07051bb50188dd
http://www.mdpi.com/1996-1944/8/8/5112
http://www.mdpi.com/1996-1944/8/8/5112