Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yi-Yin Chung"'
Autor:
Yi-Yin Chung, Chih-Chung Yang, Cheng-Ta Kuo, Kung-Jen Ma, Jian-Shihn Tsang, En-Chiang Lin, Cheng Hsu, Shih-Wei Feng, Yen-Sheng Lin, Hui-Wen Chuang, Yung-Chen Cheng
Publikováno v:
Journal of Applied Physics. 93:9693-9696
Optical measurements of temperature-dependent photoluminescence (PL) spectral peak, integrated PL intensity and PL decay time, and microstructure analyses with high-resolution transmission electron microscopy showed the strong dependencies of thermal
Autor:
Shih-Wei Feng, Cheng-Ta Kuo, Jian-Shihn Tsang, Yi-Yin Chung, Yung-Chen Cheng, En-Chiang Lin, Yen-Sheng Lin, Kung-Jen Ma, Chih-Chung Yang
Publikováno v:
Journal of Crystal Growth. 252:107-112
The microstructure variations upon post-growth thermal annealing at different temperatures of InGaN/GaN quantum well (QW) structures of different well widths are demonstrated. The high-resolution transmission electron microscopy images showed that wi
Autor:
Yi Yin Chung, Yung-Chen Cheng, Yen-Sheng Lin, C.-C. Hsu, Chih-Chung Yang, Jen-Inn Chyi, Kung-Jeng Ma, Shih-Wei Feng
Publikováno v:
Journal of Applied Physics. 92:4441-4448
Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have been widely reported. However, their physical interpretations have not been well discussed yet. Based on wavelength-dependent and temperature-varying time-resolved PL
Autor:
Chih-Wen Liu, Yen-Sheng Lin, Shih-Wei Feng, Yung-Chen Cheng, Kung-Jeng Ma, Chi Chih Liao, Chih-Chung Yang, Jen-Inn Chyi, Yi Yin Chung
Publikováno v:
physica status solidi (b). 228:121-124
Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-de
Autor:
C.-C. Hsu, Yung-Chen Cheng, Kung-Jeng Ma, Hongxing Jiang, Jingyu Lin, Chih-Chung Yang, Shih-Wei Feng, Yi-Yin Chung, Chih-Chiang Yan
Publikováno v:
Applied Physics Letters. 82:1377-1379
We observed strong green luminescence (around 2.37 eV) in two InAlGaN thin film samples, which were originally prepared for applications in the UV range. Based on the observation of the InN peaks and the extended distributions, corresponding to InGaN
Autor:
Yen-Sheng Lin, Shih-Wei Feng, Chih-Chung Yang, Jen-Inn Chyi, Yi Yin Chung, Yung-Chen Cheng, Ming Hua Mao, Kung-Jeng Ma
Publikováno v:
Applied Physics Letters. 80:4375-4377
Based on wavelength-dependent and temperature-varying time-resolved photoluminescence (PL) measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in an InGaN/GaN quantum well structure was
Autor:
Yen-Sheng Lin, Cheng-Ta Kuo, Chih-Chung Yang, Shih-Wei Feng, Jian-Shihn Tsang, Thomas E. Weirich, Ming-Hua Mao, Chih-Wen Liu, Yung-Chen Cheng, Hui-Wen Chuang, Kung-Jen Ma, Cheng Hsu, Yi-Yin Chung
Publikováno v:
Applied Physics Letters. 80:2571-2573
Postgrowth thermal annealing of an InGaN/GaN quantum-well sample with a medium level of nominal indium content (19%) was conducted. From the analyses of high-resolution transmission electron microscopy and energy filter transmission electron microsco
Autor:
Chih-Chung Deng, En-Chiang Lin, Si-Jiung Lin, Tsung-Yi Tang, Chih-Chung Yang, Hsiang-Chen Wang, Kung-Jen Ma, Yung-Chen Cheng, Yen-Sheng Lin, Yi-Yin Chung, Shih-Wei Feng
Publikováno v:
Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701).
We will summarize the optical characteristics and microstructures of the indium-aggregated quantum dots in InGaN compounds, including intended InGaN/GaN quantum well structures and InGaN epi-layers. In quantum well structures, the dependencies of opt
Autor:
Thomas E. Weirich, Yung-Chen Cheng, Cheng-Ta Kuo, Jian-Shihn Tsang, Cheng Hsu, Kung-Jeng Ma, Hui-Wen Chuang, Shih-Wei Feng, Chih-Chung Yang, Yi-Yin Chung, Chih-Wen Liu, Yen-Sheng Lin
Publikováno v:
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. In this paper, we report the formation of quasiregular QDs from randomly distributed indium aggregated clusters after post-growth thermal annealing (PGTA) of an InGaN/GaN QW sample. The optical measurements showed quite consi
Autor:
Yi-Yin Chung, Chih-Wei Liu, Chih-Chung Yang, Yen-Sheng Lin, Jen-Inn Chyi, C.-C. Hsu, Yung-Chen Cheng, Kung-Jeng Ma, Shih Wei Feng
Publikováno v:
Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557).
Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.