Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yi-Wei Lain"'
Autor:
Shawn S. H. Hsu, Po-Wen Chiu, Chen-Hung Liao, Yu-Chiao Chiu, Chao-Hui Yeh, David Ricardo Moyano, Yi-Wei Lain
Publikováno v:
ACS Nano. 8:7663-7670
Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5842a3c53ecfc3e1f4a81b294036fb6
https://doi.org/10.1021/nn5036087
https://doi.org/10.1021/nn5036087
Publikováno v:
IEEE Electron Device Letters. 31:102-104
In this letter, we propose using an oxide-filled isolation structure followed by N2/H2 postgate annealing to reduce the leakage current in AlGaN/GaN HEMTs. An off-state drain leakage current that is smaller than 10-9 A/mm (minimum 5.1 × 10-10 A/mm)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::228d9bf015d17de5a97f0688bf5b7a3d
https://doi.org/10.1109/led.2009.2036576
https://doi.org/10.1109/led.2009.2036576