Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yi-Wei Chiang"'
Autor:
Chia-Jung Li, Tai-Ling Chao, Ting-Yu Chang, Chia-Chun Hsiao, De-Chao Lu, Yi-Wei Chiang, Guan-Chun Lai, Ya-Min Tsai, Jun-Tung Fang, Siman Ieong, Jann-Tay Wang, Sui-Yuan Chang, Shih-Chung Chang
Publikováno v:
Microbiology Spectrum, Vol 10, Iss 2 (2022)
ABSTRACT Most of SARS-CoV-2 neutralizing antibodies (nAbs) targeted the receptor binding domain (RBD) of the SARS-CoV-2 spike (S) protein. However, mutations at RBD sequences found in the emerging SARS-CoV-2 variants greatly reduced the effectiveness
Externí odkaz:
https://doaj.org/article/14d69493f82c44f6a3e05ea2c4275420
Autor:
Yi-Wei Chiang, 江翊瑋
106
The Augmented Reality (AR) technology has a wide range of applications. Therefore, Google and Apple are actively developing this technology as they see its potential in future. One of the advantages of augmented reality is that it can be int
The Augmented Reality (AR) technology has a wide range of applications. Therefore, Google and Apple are actively developing this technology as they see its potential in future. One of the advantages of augmented reality is that it can be int
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/76v76n
Autor:
Yi-Wei Chiang, 姜翊惟
106
Atmospheric-pressure plasma jet (APPJ) is not only used to treat the solid surface but also attracts great attention in the liquid phase. In particular, many studies report that the electrons could be provided continuously by APPJ to reduce
Atmospheric-pressure plasma jet (APPJ) is not only used to treat the solid surface but also attracts great attention in the liquid phase. In particular, many studies report that the electrons could be provided continuously by APPJ to reduce
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/agnmt6
Autor:
Yi-Wei Chiang, 江逸偉
100
Tamkang University MEMS group has already developed flapping wing ornithopters (MAVs) for over 9 years. The development of the 20cm-wingspan “Golden Snitch” has a flight endurance of more than 8 minutes. How to modify the flapping mechan
Tamkang University MEMS group has already developed flapping wing ornithopters (MAVs) for over 9 years. The development of the 20cm-wingspan “Golden Snitch” has a flight endurance of more than 8 minutes. How to modify the flapping mechan
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/10429243663602360073
Autor:
Shih-Chung Chang, Heng-Yi Su, Chia-Wei Weng, Hui-Wen Chen, Yi-Wei Chiang, Chia-Jung Li, Kai-Ting Hsieh
Publikováno v:
Applied Microbiology and Biotechnology
Many cases of avian influenza A(H7N9) virus infection in humans have been reported since its first emergence in 2013. The disease is of concern because most patients have become severely ill with roughly 30% mortality rate. Because the threat in publ
Autor:
Guan-Chun Lai, Tai-Ling Chao, Shiau-Yu Lin, Han-Chieh Kao, Ya-Min Tsai, De-Chao Lu, Yi-Wei Chiang, Sui-Yuan Chang, Shih-Chung Chang
Publikováno v:
Antiviral research. 200
Neutralizing antibodies (NAbs) are believed to be promising prophylactic and therapeutic treatment against the coronavirus disease 2019 (COVID-19), which is caused by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). Here, we reported two
Autor:
Tsun-Hung Tsai, Yi-Wei Chiang
Publikováno v:
2019 IEEE International Conference on Architecture, Construction, Environment and Hydraulics (ICACEH).
This study employed simultaneous-localization-and-mapping-based augmented reality technology in a guided tour for a historic site. Virtual objects integrated real environment to promote users' senses of immersion, and a gamification mechanism was app
Publikováno v:
IEEE Transactions on Electron Devices. 65:493-498
This paper demonstrates novel silicon–oxide–nitride–nitride–oxide–silicon (SONNOS) and silicon-oxide-nanocrystals-oxide-silicon (SOncOS) nonvolatile memory (NVM) that is based on nanowires gate-all-around (GAA) structure. SONNOS and SOncOS
Publikováno v:
ASME 2016 Conference on Information Storage and Processing Systems.
This work presents the structure Junctionless FinFET (JLFinFET) based on ultra-thin body (UTB) with double stacked Si3N4 charge trapping layer (NN-CTL) Si-SiO2-Si3N4-Si3N4-SiO2-Si (SONNOS) nonvolatile memory (NVM). The device shows excellent transist