Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yi-Shin Yeh"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 69:4521-4532
This article demonstrates a $W$ -band local-oscillator generation technique in 120-nm SiGe BiCMOS technology with high output power and high efficiency. The circuit employs a frequency quadrupler that is driven with differential quadrature inputs tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a213934d330b8c7c18a6e3f43e6a7a7
https://doi.org/10.1109/tmtt.2021.3097711
https://doi.org/10.1109/tmtt.2021.3097711
Autor:
Carlos Nieva, Zinia Tuli, Mario Weiss, Dimitri Frolov, Surej Ravikumar, Said Rami, Henning Braunisch, Hariprasad Chandrakumar, Vijaya B. Neeli, Iwen Huang, Jessica C. Chou, Yi-Shin Yeh, Neelam Prabhu Gaunkar, Telesphor Kamgaing, Triveni S. Rane, D. Correas-Serrano, Thomas W. Brown, Jeffery W. Bates, Georgios C. Dogiamis, Mauricio Marulanda, Jag Rangaswamy, Jabeom Koo, Qiang Yu, Ye Seul Nam
Publikováno v:
IEEE Solid-State Circuits Letters. 4:206-209
This letter presents a 134-GHz superheterodyne transceiver system in 22-nm CMOS for dielectric waveguides measured at reaches up to 3 m. Greater than 12 GHz of RF bandwidth and 16 QAM signaling combine to achieve 50 Gb/s with a measured EVM of −19.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a547bfa3d0f7825d9bf2a07334165f0
https://doi.org/10.1109/lssc.2021.3122080
https://doi.org/10.1109/lssc.2021.3122080
Autor:
Yi-Shin Yeh, Brian Floyd
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:5496-5509
This article presents a dual-vector distributed beamformer architecture that employs a series-feed network and is capable of supporting up to four simultaneous beams. The multibeam array uses scalar functions within each front end to create Cartesian
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97913ad9d858e12c314652f453a516b9
https://doi.org/10.1109/tcsi.2020.3026624
https://doi.org/10.1109/tcsi.2020.3026624
Autor:
Yi-Shin Yeh, Hyung-Jin Lee, Surej Ravikumar, Neelam Prabhu Gaunkar, Jeffery W. Bates, Jessica C. Chou, Mario Weiss, Mauricio Marulanda, Qiang Yu, Thomas W. Brown, Georgios C. Dogiamis, Jag Rangaswamy, Iwen Huang, Dimitri Frolov, Zinia Tuli, Ram Sadhwani, Triveni S. Rane, Ye Seul Nam, Carlos Nieva, Vijaya B. Neeli, Cho-Ying Lu, Said Rami, Henning Braunisch, Hariprasad Chandrakumar, Telesphor Kamgaing, D. Correas-Serrano
Publikováno v:
VLSI Circuits
A 134 GHz 16 QAM fully-packaged transceiver system for dielectric waveguides with >12 GHz of RF bandwidth built in 22nm CMOS achieves a measured EVM of -19.8 dB (~5x10-6 BER) at a reach of 3 meters at a 50 Gbps data rate at a total power consumption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419ed97946bdfeea18105c7ca20e5ae9
https://doi.org/10.23919/vlsicircuits52068.2021.9492497
https://doi.org/10.23919/vlsicircuits52068.2021.9492497
Autor:
Yunzhe Ma, Yi-Shin Yeh, Triveni S. Rane, Carlos Nieva, Jeremy Wahl, Surej Ravikumar, Guannan Liu, Jessica C. Chou, Sell Bernhard, Mark Armstrong, Saurabh Morarka, Vijaya B. Neeli, Mauricio Marulanda, Nathan Monroe, Said Rami, Hui Fu, Dyan Ali, L. Paulson, Hyung-Jin Lee, Sameer Joglekar, Thomas C. Brown, Jabeom Koo, Jeffrey Garrett, Ruonan Han, Qiang Yu, Georgios C. Dogiamis, Eric Karl, James Waldemer, Ying Zhang
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents the recent mmWave and sub-THz oriented technology developments as part of RF design-technology co-optimization (DTCO) efforts in Intel 22nm FinFET process (22FFL). Several back-end-of-line (BEOL) and front-end-of-line (FEOL) impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f2fc7a955450fb986a2df6a680fade
https://doi.org/10.1109/iedm13553.2020.9372105
https://doi.org/10.1109/iedm13553.2020.9372105
Autor:
Yi-Shin Yeh, Hyung-Jin Lee
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents a 5-6 GHz fully-differential low-noise amplifier in 22-nm FinFET Low-Power CMOS technology. To achieve wide gain control, the three-stage LNA consists of a Tee-type RF attenuator and a current-steering variable-gain amplifier. Thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04d766892060a2347fa25113ada01eae
https://doi.org/10.1109/rfic49505.2020.9218439
https://doi.org/10.1109/rfic49505.2020.9218439
Autor:
Said Rami, Saurabh Morarka, Jabeom Koo, Qiang Yu, Guannan Liu, Jeffrey Garret, Yi-Shin Yeh, Hyung-Jin Lee
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents an E-band power amplifier (PA) designed using a novel high power FinFET device (HyPowerFF) with dual work function materials and oxide thicknesses under a common gate in Intel 22nm FinFET low-power (22FFL) technology. The new devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabb6587988c46065d915942c46c05bc
https://doi.org/10.1109/ims30576.2020.9224055
https://doi.org/10.1109/ims30576.2020.9224055
Autor:
Seiji Takeuchi, Takeji Fujibayashi, Yohsuke Takeda, Yi-Shin Yeh, Brian Floyd, Willem Stapelbroek, Weihu Wang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:2226-2241
This paper presents a packaged 76- to 81-GHz transceiver chip implemented in SiGe BiCMOS for both long-range and short-range automotive radars. The chip contains a two-channel transmitter (TX), a six-channel receiver (RX), a local-oscillator (LO) cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f45856b584bfcd13773134fd890c8c7
https://doi.org/10.1109/jssc.2017.2700359
https://doi.org/10.1109/jssc.2017.2700359
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:1230-1244
This paper presents a 28-GHz four-channel phased-array receiver in 130-nm SiGe BiCMOS technology for fifth-generation cellular application. The phased-array receiver employs scalar-only weighting functions within each receive path and then global qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c07ba1f65fc2115e7409a7eeae7403
https://doi.org/10.1109/jssc.2016.2635664
https://doi.org/10.1109/jssc.2016.2635664
Publikováno v:
2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
In this paper, we discuss architectures and integrated circuits for efficient, reconfigurable and compact millimeter-wave beamforming in silicon. First, we present techniques to improve peak and back-off power-added efficiency (PAE) of SiGe power amp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e66739fca9bb144519a51e0e8399e5d3
https://doi.org/10.1109/bctm.2017.8112913
https://doi.org/10.1109/bctm.2017.8112913