Zobrazeno 1 - 10 of 16 pro vyhledávání: '"Yi-Jung Jung"'
1
Characterization of Al2O3–HfO2–Al2O3 sandwiched MIM capacitor under DC and AC stresses
Autor: Hyuk-Min Kwon, Yi-Jung Jung, Song-Jae Lee, Ho-Young Kwak, Hi-Deok Lee, Jae-Hyung Jang, Woon-Il Choi, Man-Lyun Ha, Ju-Il Lee, Sung-Kyu Kwon
Publikováno v: Solid-State Electronics. 79:218-222
In this paper, electrical properties and reliability of high capacitance density Metal–Insulator–Metal (MIM) capacitor with sandwiched hafnium-based dielectric is analyzed using three kinds of voltage stress; constant voltage stress (CVS), unipol
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1781755b158aa12879069fc249939a6c
https://doi.org/10.1016/j.sse.2012.09.007
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3
Analysis of Thermal Stability and Schottky Barrier Height of Pd Germanide on N-type Ge-on-Si Substrate
Autor: Minho Kang, Se-Kyung Oh, Jeong-Deuk Bok, Ga-Won Lee, Hi-Deok Lee, Hong-Sik Shin, Hyuk-Min Kwon, Yi-Jung Jung
Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24:271-275
In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricate
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02e5c415a9d760be0d4756c9f3aa453d
https://doi.org/10.4313/jkem.2011.24.4.271
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4
Analysis of Positive Bias Temperature Instability Characteristic for Nano-scale NMOSFETs with La-incorporated High-k/metal Gate Stacks
Autor: Jae-Hyung Jang, Ho-Young Kwak, Sung-Yong Go, Jung-Deuk Bok, Hyuk-Min Kwon, Yi-Jung Jung, Sung-Kyu Kwon, Weon-Mook Lee, Hi-Deok Lee, Sang-Uk Park, In-Shik Han
Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24:182-187
In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift () of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of Hf
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7453644999cd2d0024539eb22a49dbb
https://doi.org/10.4313/jkem.2011.24.3.182
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5
Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate
Autor: Yi-Sun Chung, Chang Yong Kang, Jung-Deuk Bok, In-Shik Han, Sang-Uk Park, R. Jammy, Paul Kirsch, Hyuk-Min Kwon, Jung-Hwan Lee, Hi-Deok Lee, Ga-Won Lee, Yi-Jung Jung
Publikováno v: IEEE Electron Device Letters. 32:686-688
The behavior of ID random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO2/TaN is experimentally investigated and discussed. The ID-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The obse
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c79eeaf306b4d539438799f054193bf5
https://doi.org/10.1109/led.2011.2114633
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6
Dependence of 1/f noise characteristics of NMOSFETs on body bias and temperature in sub-threshold region
Autor: Hyuk-Min Kwon, Yi-Jung Jung, Jong-Kon Lee, Song-Jae Lee, Jae-Hyung Jang, Da-Soon Lee, Ho-Young Kwak, Sang-Su Kim, Hi-Deok Lee, Sung-Kyu Kwon
Publikováno v: 2011 International Semiconductor Device Research Symposium (ISDRS).
Low frequency noise has become one of the major issues for an analog mixed signal and RF (radio frequency) circuits [1]. Previous studies have extensively analyzed drain/gate bias and temperature dependence of 1/f (flicker) noise in a strong inversio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68cc19a18c2aa21e6dcd4c088c6670f6
https://doi.org/10.1109/isdrs.2011.6135357
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7
Novel BJT test structure for high-performance matching characteristics in CMOS-based analog applications
Autor: Jung-Deuk Bok, In-Shik Han, Byoung-Seok Park, Hyuk-Min Kwon, Yi-Jung Jung, Jung-Hwan Lee, Hi-Deok Lee, Yi-Sun Chung, Min-Gyu Lim, Sang-Uk Park
Publikováno v: 2011 IEEE ICMTS International Conference on Microelectronic Test Structures.
A novel test structure of bipolar junction transistors fabricated using CMOS technology is proposed for high-performance analog applications. The matching characteristics of collector current I C and current gain β of the proposed structure show imp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d92e2ef63029ce6cebc28e8bd74ff317
https://doi.org/10.1109/icmts.2011.5976846
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8
Decoupling of RTS noise in high density CMOS image sensor using new test structures
Autor: Seong-Hyung Park, Jung-Deuk Bok, Woon-Il Choi, Man-Lyun Ha, Hyuk-Min Kwon, Yi-Jung Jung, Ju-Il Lee, In-Shik Han, Hi-Deok Lee, Sang-Uk Park
Publikováno v: 2011 IEEE ICMTS International Conference on Microelectronic Test Structures.
In this work, new test structures are proposed to characterize the RTS (Random Telegraph Signal) noise of the CMOS image sensor. The RTS noise of the driver transistor and the source follower transistor, as well as the source follower block itself, a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8eee5d13269a1dbf0b8325f298cfe47
https://doi.org/10.1109/icmts.2011.5976865
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