Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yi-Chun Zhou"'
Autor:
Zhao-Yuan Fan, Zhenhua Tang, Jun-Lin Fang, Yan-Ping Jiang, Qiu-Xiang Liu, Xin-Gui Tang, Yi-Chun Zhou, Ju Gao
Publikováno v:
Nanomaterials, Vol 14, Iss 7, p 583 (2024)
Compared with purely electrical neuromorphic devices, those stimulated by optical signals have gained increasing attention due to their realistic sensory simulation. In this work, an optoelectronic neuromorphic device based on a photoelectric memrist
Externí odkaz:
https://doaj.org/article/2696187ae117480db305983641ecfd11
Autor:
Yuan-Dong Xu, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Zhenhua Tang, Wen-Hua Li, Xiao-Bin Guo, Yi-Chun Zhou
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 39 (2022)
Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor sta
Externí odkaz:
https://doaj.org/article/e24039886bb1440d9f7b0ccbbf8448ff
Selected, peer reviewed papers from the IUMRS-ICA 2010, 11th IUMRS International Conference in Asia, September 25-28, 2010, Qingdao, China
Autor:
Dan Qie, Zhenhua Tang, Junlin Fang, Dijie Yao, Li Zhang, Yan-Ping Jiang, Qi-Jun Sun, Dan Zhang, Jing-Min Fan, Xin-Gui Tang, Qiu-Xiang Liu, Yi-Chun Zhou
Publikováno v:
Applied Physics Letters. 122
Pulsed power systems require high-performance capacitors with high energy storage density. In this work, (1 − x)BaTiO3-xBi(Mg1/2Sn1/2)O3 ferroelectric ceramics were synthesized in a solid-state solution. The sample of x = 0.12 (0.88BT-0.12BMS) has
Publikováno v:
Thin Solid Films. 774:139842
Autor:
Ren-Jie Liu, Jia-Jie Lin, Zheng-Hao Shen, Jia-Liang Sun, Tian-Gui You, Jin Li, Min Liao, Yi-Chun Zhou
Publikováno v:
Chinese Physics B. 31:076103
Integration of the high-quality GaSb layer on an Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, a suitable ion implantation fluence of 5 × 1016-cm−2 H ions for GaSb layer transfer is confir
Publikováno v:
AIP Advances, Vol 3, Iss 5, Pp 052134-052134 (2013)
Paraelectric and ferroelectric phase structures of SrBi2Ta2O9 were calculated using first-principles density functional theory. Berry phase method is used to study the spontaneous polarization in ferroelectric SrBi2Ta2O9. The spontaneous polarization
Externí odkaz:
https://doaj.org/article/19770040196a4b9e9ac7b8e60e2c9707
Publikováno v:
Journal of Inorganic Materials. 26:491-494
在壳模型的基础上, 通过分子动力学方法模拟了压强对Bi 4 Ti 3 O 12 (BIT)铁电相变行为的影响. 为了提高模拟的准确性, 在原有势参数的基础上增加了Ti-Ti短程相互作用势. 计算得出了温度为300K时
Publikováno v:
Transactions of Nonferrous Metals Society of China. 16:s71-s74
Thin films of Nd 3+ /V 5+ -cosubstituted bismuth titanate, (Bi 3.5 Nd 0.5 )(Ti 2.96 V 0.04 )O 12 (BNTV), were fabricated on the Pt(111)/Ti/SiO 2 /Si(100) substrates by a chemical solution deposition technique and annealed at different temperatures of
Failure of Thermal Barrier Ceramic Coating Induced by Buckling Due to Temperature Gradient and Creep
Autor:
W.G. Mao, Yi Chun Zhou
Publikováno v:
Advanced Materials Research. 9:31-40
The intent of this article was to study the failure mechanism of thermal barrier coatings (TBCs) induced by buckling. The main content included the following two parts. The first part investigated the thermal residual stresses fields in TBCs with the