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Publikováno v:
Materials Science Forum. 954:188-193
Power electronic devices are the basis of power converters, and excellent device performance improves that of power converters directly. In this paper we take SiC MOSFET CAS120M12BM2 (1200V/ 120A) and Si IGBT FF150R12KE3G (1200V/150A) as examples, wh
Autor:
Yi Zhong Hong Lv, Yan Cui
Publikováno v:
Materials Science Forum. :1643-1648
The chemical element and its valence at the fracture surface of SiCp/Al2O3-Al composites synthesized by oxidative infiltration of Al melt were analyzed quantitatively using X-ray photoelectron spectrometer(XPS), the percentage content of various phas