Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yi Ying Lai"'
Autor:
Yi Ying Lai, 賴怡穎
99
Previous researches discussed the topics of prosocial motivation between persistence, performance, creativity, and citizenship behaviors. Grant and Sumanth (2009) suggest that researchers conduct further studies on prosocial motivation direct
Previous researches discussed the topics of prosocial motivation between persistence, performance, creativity, and citizenship behaviors. Grant and Sumanth (2009) suggest that researchers conduct further studies on prosocial motivation direct
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77517129678899994861
Publikováno v:
Optics letters. 39(19)
We demonstrate a single-frequency, continuous-wave, optically pumped semiconductor laser (OPSL) using an injection-locking technique. Parameters such as output coupling, injection power, and injection wavelength are investigated. With the proper para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc661867131c5e12d3f91543ceade568
https://pubmed.ncbi.nlm.nih.gov/25360940
https://pubmed.ncbi.nlm.nih.gov/25360940
Publikováno v:
SPIE Proceedings.
We report a novel single-frequency, injection-locked vertical external-cavity surface-emitting laser (VECSEL) for the first time to the best of our knowledge. The wavelength of the injection locked output can be tuned with the master laser. A lower p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd9bb4078cd4c382d9b10d8310d9865
https://doi.org/10.1117/12.2038607
https://doi.org/10.1117/12.2038607
Autor:
C. P. Hains, Ganesh Balakrishnan, J. M. Yarborough, Jerome V. Moloney, Yushi Kaneda, Yi-Ying Lai, Stephan W. Koch, T. J. Rotter, Jörg Hader
Publikováno v:
IEEE Photonics Technology Letters. 22:1253-1255
A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e699acc52dfae1b79151f958bfb2b47
https://doi.org/10.1109/lpt.2010.2052596
https://doi.org/10.1109/lpt.2010.2052596
Autor:
C. P. Hains, Sadhvikas Addamane, P. Ahirwar, S. P. R. Clark, Jörg Hader, Ganesh Balakrishnan, Yi-Ying Lai, Alexandre Laurain, L. R. Dawson, Jerome V. Moloney, D. M. Shima, Robert Bedford, T. J. Rotter
Publikováno v:
Vertical External Cavity Surface Emitting Lasers (VECSELs) III.
The antimonide based vertical external cavity surface emitting lasers (VECSELs) operating in the 1.8 to 2.8 Tm wavelength range are typically based on InGaAsSb/AlGaAsSb quantum wells on AlAsSb/GaSb distributed Bragg reflectors (DBRs) grown lattice-ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1bccd089631e251d15d8b863ce41c0
https://doi.org/10.1117/12.2005301
https://doi.org/10.1117/12.2005301
Autor:
C. P. Hains, P. Ahirwar, Yi-Ying Lai, Alexandre Laurain, Ganesh Balakrishnan, S. P. R. Clark, D. M. Shima, Mike Yarborough, Tsuei Lian Wang, Jerome V. Moloney, Jörg Hader, T. J. Rotter
Publikováno v:
IEEE Photonics Conference 2012.
The growth of antimonide vertical external cavity surface emitting lasers (VECSELs) for 1.8 to 2.8 µm emission wavelength is typically based on InGaAsSb/AlGaAsSb quantum wells on GaSb/AlAsSb DBRs which are in turn grown on GaSb substrates. Thus the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fbf8a88bcfa041e0ebe6dfbdf0ca42c
https://doi.org/10.1109/ipcon.2012.6358814
https://doi.org/10.1109/ipcon.2012.6358814
Publikováno v:
Proceedings of ISAF-ECAPD-PFM 2012.
The main purpose of this paper is to compare three different topologies of LED drivers by using a piezoelectric transformer. The advantages of LEDs lighting applications include small size, low power consumption and high efficacy. On the other hand,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c0bc695a0d6998d4b14d2bc2dee9eee
https://doi.org/10.1109/isaf.2012.6297741
https://doi.org/10.1109/isaf.2012.6297741
Autor:
Mike Yarborough, Yi Ying Lai, Jerome V. Moloney, P. Ahirwar, Jörg Hader, Thomas J. Rotter, Tsuei Lian Wang, Ganesh Balakrishnan, Alexandre Laurain
Publikováno v:
SPIE Proceedings.
We investigate experimentally and theoretically the influence of non-radiative carrier losses on the performance of VECSELs under pulsed and CW pumping conditions. These losses are detrimental to the VECSEL performance not only because they reduce th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb1d97f97c137c378e8b88609f7bd514
https://doi.org/10.1117/12.909412
https://doi.org/10.1117/12.909412
Autor:
Alexander R. Albrecht, C. P. Hains, P. Ahirwar, V. Patel, Tsuei Lian Wang, J. M. Yarborough, S. P. R. Clark, David L. Mathine, T. J. Rotter, Jerome V. Moloney, Yushi Kaneda, Yi Ying Lai, Jörg Hader, Stephan W. Koch, Ganesh Balakrishnan
Publikováno v:
SPIE Proceedings.
We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::774558d68524623c771464341048a2cd
https://doi.org/10.1117/12.874234
https://doi.org/10.1117/12.874234
Autor:
Alexandre Laurain, P. Ahirwar, Nahid A. Jahan, Robert Bedford, Jerome V. Moloney, Sadhvikas Addamane, Ikuo Suemune, S. P. R. Clark, Ganesh Balakrishnan, T. J. Rotter, Yi-Ying Lai, Jörg Hader, D. M. Shima
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 19:1700611-1700611
We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distributed Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c572c6fd9514162d98153c6dd6aed73
https://doi.org/10.1109/jstqe.2013.2239615
https://doi.org/10.1109/jstqe.2013.2239615