Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yi Wanbing"'
Autor:
Yi Wanbing, Kwang Sing Yew, Ramasamy Chockalingam, Ran Xing Ong, Juan Boon Tan, Bo Li, Yi Jiang
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Limiting the minimum spacing design rule of intra-metal lines and skipping the inter-metal layer in interconnects for more oxide spacing in order to improve TDDB margin for HV applications is not viable as it severely compromises the competitiveness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db186c38c3456ee7e80ae5dbc81c879
https://doi.org/10.1109/iitc51362.2021.9537519
https://doi.org/10.1109/iitc51362.2021.9537519
Autor:
Juan Boon Tan, Kwang Sing Yew, Ramasamy Chockalingam, Yi Wanbing, Kemao Lin, Yi Jiang, Jonathan Yoong Seang Ong, Weining Cheng, Hsieh Curtis Chun-I, Soh Yun Siah
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Two phenomena of dual damascene via open in extremely low local metal pattern density region, and when connected through a narrow width metal line to a big pad opening with high density sea of vias are identified. A systematic study was carried out t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::483d174004d5757cf596a849c53ebba4
https://doi.org/10.1109/iitc47697.2020.9515630
https://doi.org/10.1109/iitc47697.2020.9515630
Autor:
Yew Tuck Chow, Yi Wanbing, Chin Chuan Neo, Francis Poh, Sarin A. Deshpande, Yi Jiang, Bharat Bhushan, Juan Boon Tan, Kah Wee, Kerry Joseph Nagel, Sanjeev Aggarwal, Moazzem Hossain, Wang Zhehui, Ju Dy, Danny Pak-Chum Shum, Guoqing Lin
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
We present the first exploratory low temperature, lower than standard back-end-of-line (BEOL) interconnects temperature in CMOS. The approach poses several challenges such as undercut in pad via, photo resist residue defects post Aluminum (Al) etch a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acef7f653d4bcfb5b43d6c8d1db2f92
https://doi.org/10.1109/iitc-amc.2017.7968956
https://doi.org/10.1109/iitc-amc.2017.7968956
Autor:
Yi Wanbing, E E Jan Khor, C.S. Premachandran, Fahad Mirza, Juan Boon Tan, Carole Graas, Patrick Justison, Fook Hong Lee
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Multi-layered systems are susceptible to cracking and or delamination upon temperature cycling. Passivation integrity test (PIT) is widely leveraged to assess and qualify the mechanical integrity of the passivation films (oxide, nitride) deposited on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74758bcfe54c5885afcc7b46ad71cdd
https://doi.org/10.1109/ipfa.2016.7564315
https://doi.org/10.1109/ipfa.2016.7564315
Autor:
H. Cong, Z.H. Wang, Yi Wanbing, H.F. Sheng, T.L. Wee, D. X. Wang, S.G. Choi, Juan Boon Tan, B.F. Phoong
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
In this paper, a thorough investigation on a memory yield detractor due to metal void is presented. The metal void was found to have a strong dependency on isolated well size. It was formed due to galvanic effect. The failure mechanism in this unique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d544c2f46508a7eba31a734f1d653d67
https://doi.org/10.1109/ipfa.2015.7224327
https://doi.org/10.1109/ipfa.2015.7224327
Publikováno v:
IEEE International Interconnect Technology Conference.
The dependency of Cu interconnects barrier metal liner integrity due to neighboring pattern density is presented in this paper. It was found that TaN/Ta bi-layer barrier metal liner on isolated Cu interconnects was oxidized through electrical test an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83838a716ac6982534f18d6f945b6536
https://doi.org/10.1109/iitc.2014.6831882
https://doi.org/10.1109/iitc.2014.6831882
Publikováno v:
Semiconductor Science and Technology. 19:571-573
Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99f1a5f1717d717ae69880179ac6cb5
https://doi.org/10.1088/0268-1242/19/5/003
https://doi.org/10.1088/0268-1242/19/5/003
Autor:
Chen, Jing jessie_jchen@yahoo.com, Wang, Xi1, Dong, Yemin1, Wang, Xiang1, Yi, Wanbing1, Zheng, Zhihong1, Lin, Zixin1
Publikováno v:
Thin Solid Films. Jan2005, Vol. 472 Issue 1/2, p309-316. 8p.