Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Yi Ting Tseng"'
Autor:
Yen Siong Ng, Cheng-Shun Cheng, Masahiro Ando, Yi-Ting Tseng, Shu-Ting He, Chun-Yuan Li, Shu-Wen Cheng, Yi-Min Chen, Ramya Kumar, Chun-Hung Liu, Haruko Takeyama, Ikuo Hirono, Han-Ching Wang
Publikováno v:
Communications Biology, Vol 6, Iss 1, Pp 1-11 (2023)
Abstract In addition to the Warburg effect, which increases the availability of energy and biosynthetic building blocks in WSSV-infected shrimp, WSSV also induces both lipolysis at the viral genome replication stage (12 hpi) to provide material and e
Externí odkaz:
https://doaj.org/article/f34decb3343547c08d48fd0a80866356
Autor:
Yu-Te Tsai, Po-Liang Lu, Hung-Jen Tang, Chung-Hao Huang, Wei-Chun Hung, Yi-Ting Tseng, Kun-Mu Lee, Shang-Yi Lin
Publikováno v:
Emerging Microbes and Infections, Vol 11, Iss 1, Pp 1867-1875 (2022)
Candida auris, a multidrug resistant pathogenic yeast, has spread worldwide and caused several outbreaks in healthcare settings. Here, we report the first case of C. auris candidemia in Taiwan in a patient with a two-month history of hospitalization
Externí odkaz:
https://doaj.org/article/619da0e86c764e2284031c9b6171ff04
Autor:
Yi Ting Tseng, 曾逸婷
92
In this study, Bismuth Telluride compounds were fabricated by the metal-organo complex method plus subsequent hot-pressing. The effects of hot-pressing (HP) temperature and pressure on thermoelectric properties crystal structure, grain size,
In this study, Bismuth Telluride compounds were fabricated by the metal-organo complex method plus subsequent hot-pressing. The effects of hot-pressing (HP) temperature and pressure on thermoelectric properties crystal structure, grain size,
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54999739023216048571
Autor:
Nengfan Liu, Gaoqi Yang, Yuli He, Guokun Ma, Ao Chen, Qin Chen, Zhiyuan Xiong, Chunlei Liu, Yi-Ting Tseng, Ting-Chang Chang, Hao Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 981-985 (2020)
The memristor, emulating biological synapse, is recognized as one key way to overcome the classic von Neumann bottleneck. In this work, by using active metal Cu as electrode, the device of Cu/GeTeOx/TiN exhibited typical resistive switching character
Externí odkaz:
https://doaj.org/article/35c6ec2f53294485afb1e027e823038e
Publikováno v:
Journal of Global Antimicrobial Resistance, Vol 27, Iss , Pp 335-336 (2021)
Externí odkaz:
https://doaj.org/article/1ff239d0530d459e82e510c5b359e26e
Publikováno v:
Physical Review Research, Vol 4, Iss 1, p 013177 (2022)
Junctions composed of excitonic condensate (EC) bilayers exhibit intriguing physics due to the presence of interlayer tunneling. Together with the excitonic superflow, this tunneling induces a special kind of topological object which is analogous to
Externí odkaz:
https://doaj.org/article/9e22ca400fdc4bccb385d66a757babb5
Publikováno v:
Plants, Vol 11, Iss 5, p 644 (2022)
Hybridization frequently occurs in plant species. With repeated backcross, the introgression may influence evolutionary trajectories through the entry of foreign genes. However, the genetic admixture via hybridization events is often confused with th
Externí odkaz:
https://doaj.org/article/beb7a9cee70848179a4dcae79f9e781d
Autor:
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 627-632 (2018)
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises
Externí odkaz:
https://doaj.org/article/2a3a3df9e7fd42819a748ac0500399db
Publikováno v:
International Journal of Economics and Business Research. 1:1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c5175d23df22798ba5044ccf9c31e2f
https://doi.org/10.1504/ijebr.2024.10054121
https://doi.org/10.1504/ijebr.2024.10054121
Autor:
Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, Yi-Ting Tseng, Ting-Chang Chang, Kuan-Chang Chang, Ming-Hui Wang, Wen-Chung Chen, Hao-Xuan Zheng, Huaqiang Wu, He Qian, Simon M. Sze
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable devi
Externí odkaz:
https://doaj.org/article/d8be428f694a44b7840cf47aa61fd96f