Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yi Teh Chou"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:Q1-Q5
The role of oxygen in amorphous InGaZnO thin film transistor (a-IGZO TFT) is studied for the device ambient stability. The threshold voltage (Vth) value of 350◦C annealed a-IGZO TFT decreased apparently with the staying duration, and the average va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a14a1ed08b4cd67e327e84ba6ab271
https://doi.org/10.1149/2.012301jss
https://doi.org/10.1149/2.012301jss
Publikováno v:
Thin Solid Films. 520:1489-1494
We examined the characteristics of passivation-free amorphous In–Ga–Zn–O thin film transistor (a-IGZO TFT) devices under different thermal annealing atmospheres. With annealing at higher temperature, the device performed better at the above-thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8aa7b3f01205c28808103d02ff86ff6
https://doi.org/10.1016/j.tsf.2011.08.088
https://doi.org/10.1016/j.tsf.2011.08.088
Publikováno v:
Surface and Coatings Technology. 205:1497-1501
This study investigates the feasibility of using electroless plating (ELP) technology to manufacture copper (Cu) gate electrodes in thin film transistors (TFTs). The problem of poor adhesion between Cu and glass substrates is overcome by introducing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d98503fbd42f0c715c89f879e8c5e8
https://doi.org/10.1016/j.surfcoat.2010.10.011
https://doi.org/10.1016/j.surfcoat.2010.10.011
Publikováno v:
ECS Transactions. 16:11-15
Blue phosphorescence OLED devices with an external color tuning layer (ECTL) for the purpose of producing white lighting emission has been fabricated. A graded FIrpic phosphorescent blue device shows a much higher efficiency than one that is not grad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81c06fd006982310dc31d3696e2ecc54
https://doi.org/10.1149/1.3112632
https://doi.org/10.1149/1.3112632
Publikováno v:
ECS Transactions. 16:339-343
We investigated the stability of a-Si:H TFTs under mechanical strain with and without silicon nitride (SiNx:H) passivation. The process temperature of these flexibledevice, including the passivation layer, was well-controlled below 200°, and the sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc56d551cc6321f2595d179e5fb77acb
https://doi.org/10.1149/1.2980572
https://doi.org/10.1149/1.2980572
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8e9a72a506d7394010ce7ce0cd8f13
https://doi.org/10.1117/2.1201101.003446
https://doi.org/10.1117/2.1201101.003446
Publikováno v:
Thin Solid Films.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2858fc60106debeac17c6d56232e7a91
https://doi.org/10.1016/j.tsf.2010.09.018
https://doi.org/10.1016/j.tsf.2010.09.018
Publikováno v:
Oxide-based Materials and Devices.
Thin film transistor (TFT) device structure with transparent conductive oxide semiconductor is proposed for the photosensor application. The adoption of TFT-based photosensor device also is promising to be integrated with pixel-array circuits in a fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda548a4add7efec92bd48da8e917136
https://doi.org/10.1117/12.846410
https://doi.org/10.1117/12.846410
Autor:
Yi-Teh Chou, 鄒一德
94
In this thesis, we have successfully developed a transparent thin film transistors (TTFT) using a novel material Zinc Oxide (ZnO) as semiconductor layer, with high carrier mobility and optical transparency. The use of ZnO-based material can i
In this thesis, we have successfully developed a transparent thin film transistors (TTFT) using a novel material Zinc Oxide (ZnO) as semiconductor layer, with high carrier mobility and optical transparency. The use of ZnO-based material can i
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00988384794432661297
Publikováno v:
Applied Physics Letters. 98:052102
This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0001479c472c5332d3ffdf05165ee32b
https://doi.org/10.1063/1.3551537
https://doi.org/10.1063/1.3551537