Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yi Seul Han"'
Publikováno v:
International Journal of Molecular Sciences; Volume 24; Issue 3; Pages: 1855
Chemotherapy-induced peripheral neuropathy (CIPN) is a major drawback in the use of chemotherapeutic agents for patients with cancer. Although studies have investigated a broad number of molecules that might be related to CIPN, the differences in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e244c4bd353bb3053117267461861516
Analysis of the Effectiveness after Vision Training Based on Assessment of Binocular Visual Function
Autor:
Yi-Seul Han, Hyun-Sung Leem
Publikováno v:
The Korean Journal of Vision Science. 20:13-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d2ecc761105186c6e37cd7496df14a
https://doi.org/10.17337/jmbi.2018.20.1.13
https://doi.org/10.17337/jmbi.2018.20.1.13
Autor:
Yi-Seul Han, Andrzej Graja, Sun Young Nam, Kwang-Sup Lee, Kornelia Lewandowska, Bolesław Barszcz, Tae-Dong Kim
Publikováno v:
Materials Chemistry and Physics. 148:744-750
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09366ebae65b4cf85215e996675d9d06
https://doi.org/10.1016/j.matchemphys.2014.08.043
https://doi.org/10.1016/j.matchemphys.2014.08.043
Autor:
Kornelia Lewandowska, Yi-Seul Han, Kwang-Sup Lee, Sun Young Nam, Andrzej Graja, Tae-Dong Kim, Bolesław Barszcz
Publikováno v:
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy. 118:204-209
Vibrational properties of two fullerene derivatives: C60TZ-OT-5 (1) and C60TH-3HX (2) have been studied using infrared absorption and Raman scattering spectroscopies. Additionally, quantum chemical calculations of the equilibrium geometry and normal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::224978b8316bb53d643a870043693064
https://doi.org/10.1016/j.saa.2013.08.102
https://doi.org/10.1016/j.saa.2013.08.102
Publikováno v:
ECS Transactions. 52:847-852
In plasma etch process, the optical emission spectroscope (OES) is widely used to detect plasma etch endpoint. The OES gathers the intensity of the wavelength from the radicals in the plasma chamber. In addition, the OES is very sensitive to the exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056c7496d8c99e9ab4ff49d84a7d18a7
https://doi.org/10.1149/05201.0847ecst
https://doi.org/10.1149/05201.0847ecst
Publikováno v:
ECS Transactions. 52:907-912
As semiconductor devices are highly integrated, etching control is much more difficult in semiconductor industry. Plasma etching has better performance than wet etching especially in small open area etching. In semiconductor manufacturing industry, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd3e4aceed2c51ef977a4193e2572a50
https://doi.org/10.1149/05201.0907ecst
https://doi.org/10.1149/05201.0907ecst
Publikováno v:
ECS Transactions. 44:1081-1086
In current semiconductor manufacturing, as the feature size of integrated circuit (IC) devices continuously shrinks, detecting endpoint in low open area plasma etch process is more difficult than before. For endpoint detection, various kinds of senso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a45fe6ddc45efc8929f58a9cc28c1a
https://doi.org/10.1149/1.3694432
https://doi.org/10.1149/1.3694432
Publikováno v:
ECS Transactions. 44:1075-1080
Since semiconductor devices are extremely integrated, process control is much more difficult in semiconductor fabrication. The optical emission spectroscopy (OES) acquires unique wavelength intensity of particles in plasma chamber, and the endpoint c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e509834e0408208b3a055711d6ccd286
https://doi.org/10.1149/1.3694431
https://doi.org/10.1149/1.3694431
Publikováno v:
ECS Transactions. 44:1069-1074
In current semiconductor manufacturing process, plasma processes such as etch and CVD take the portion at least 40% throughout the integration processes. In etch and CVD using plasma, particles created during processes produce abnormal discharge with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ba9475b4adf7c62bd079d76bfef497
https://doi.org/10.1149/1.3694430
https://doi.org/10.1149/1.3694430
Publikováno v:
ECS Transactions. 44:1087-1091
Bosch process is developed for advanced microstructure devices and etch endpoint detection (EPD) is demanded for 'notching' (as feature profile degradation) or reducing thickness of the underlying stop. One method commonly used to detect plasma proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b99b768e6e3503bb30103bbd7f7bca
https://doi.org/10.1149/1.3694433
https://doi.org/10.1149/1.3694433