Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yi Jun Lee"'
Publikováno v:
Turkiye Klinikleri Journal of Case Reports. 30:183-186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::563239966655de7af1f0bce50626a134
https://doi.org/10.5336/caserep.2022-87986
https://doi.org/10.5336/caserep.2022-87986
Autor:
Tsung-Shiew Huang, Yi-Jun Lee, Chih-Hsun Lee, Chia-Hung Hsu, Shao-Yun Wu, Minghwei Hong, Te-Yang Lai, Pen Chang, J. Raynien Kwo, Wen-Hsin Chang
Publikováno v:
ACS Applied Materials & Interfaces. 5:1436-1441
High quality nanometer-thick Gd2O3 and Y2O3 (rare-earth oxide, R2O3) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R2O3 epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85173bddb37abb5c32045709662317d3
https://doi.org/10.1021/am302881y
https://doi.org/10.1021/am302881y
Autor:
Wen-Hsin, Chang, Shao-Yun, Wu, Chih-Hsun, Lee, Te-Yang, Lai, Yi-Jun, Lee, Pen, Chang, Chia-Hung, Hsu, Tsung-Shiew, Huang, J Raynien, Kwo, Minghwei, Hong
Publikováno v:
ACS applied materialsinterfaces. 5(4)
High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, unif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0ad0a14e0f9db43e8e97d025e0db94af
https://pubmed.ncbi.nlm.nih.gov/23360590
https://pubmed.ncbi.nlm.nih.gov/23360590
Autor:
Chia-Hung Hsu, Wen Hsin Chang, J. Raynien Kwo, Pen Chang, Chih Hsun Lee, Yi Jun Lee, J. Minghuang Hong, Minghwei Hong, Chiung Chi Tsai, Yao Chung Chang, M. L. Huang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 21(48)
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2001a79f48f95822d8846c320fefc164
https://pubmed.ncbi.nlm.nih.gov/25378271
https://pubmed.ncbi.nlm.nih.gov/25378271