Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yi He Tsai"'
Autor:
Yu-Hsien Lin, Yung-Chun Wu, Hsin-Chiang You, Chun-Hao Chen, Ping-Hua Chen, Yi-He Tsai, Yi-Yun Yang, K. S. Chang-Liao
Publikováno v:
Energies, Vol 7, Iss 6, Pp 3653-3663 (2014)
Aluminum oxide (AlOx) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlOx) was deposited on the surface of a wafer; the electric field near the surface of w
Externí odkaz:
https://doaj.org/article/4e63091359d54a9e841dc574bed47c26
Publikováno v:
IEEE Electron Device Letters. 42:1109-1111
We successfully fabricated a Ge pMOSFET with Ti that is doped into a GeO x interfacial layer (IL) of HfO2 -based gate stacks, doing so using in situ plasma-enhanced atomic layer deposition. X-ray photoelectron spectroscopy (XPS) spectra findings indi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ba80113c6c5aa5950d7da4a4ba9684
https://doi.org/10.1109/led.2021.3087490
https://doi.org/10.1109/led.2021.3087490
Autor:
Chen-Han Chou, Wen-Kuan Yeh, Yi-He Tsai, Chao-Hsin Chien, Fu-Hsiang Ko, Yu-Hsien Lin, Hui-Hsuan Li
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:4529-4534
A high-quality HfGeOx interfacial layer (IL) was formed in a HfO₂/Al₂O₃/HfO₂/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO₂ layer led to the mixing of the GeOx and HfO₂ layers, as identified through energy-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcf03403cd9542981d0979f38bd4df0
https://doi.org/10.1166/jnn.2019.16494
https://doi.org/10.1166/jnn.2019.16494
Autor:
Shao-Cheng Yu, Wen-Kuan Yeh, Chiung-Yuan Lin, An-Shih Shih, Yu-Hsi Lin, Chao-Hsin Chien, Chen-Han Chou, Yi-He Tsai
Publikováno v:
IEEE Electron Device Letters. 39:1632-1635
This letter represents the first direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1827e51b84579ee45573489bfe1550b
https://doi.org/10.1109/led.2018.2871714
https://doi.org/10.1109/led.2018.2871714
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:N15-N19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ba330d7b4c71e4205460de0d0cdbe8
https://doi.org/10.1149/2.0161802jss
https://doi.org/10.1149/2.0161802jss
Autor:
Wen-Kuan Yeh, Chao-Hsin Chien, Yun-Yan Chung, Yu-Hsien Lin, Fu-Hsiang Ko, Chen-Han Chou, Yi-He Tsai
Publikováno v:
IEEE Electron Device Letters. 40:174-176
HfO2-based gate stacks with titanium (Ti) incorporated into a GeO x interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contribut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ba1dfeea89e75125fc007b2f38dfe3
https://doi.org/10.1109/led.2018.2887090
https://doi.org/10.1109/led.2018.2887090
Autor:
Wen-Kuan Yeh, Chen-Han Chou, Yu-Hsien Lin, Chao-Hsin Chien, Chung-Chun Hsu, Yi-He Tsai, Yu-Hau Jau
Publikováno v:
IEEE Transactions on Electron Devices. 64:2314-2320
In this paper, we demonstrated the enhancement of thermal stability of nickel germanide (NiGe) alloy up to 600 °C by using titanium nitride (TiN) metal capping. A high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8608ee2112e4934d1d7f90beb26b73e2
https://doi.org/10.1109/ted.2017.2679215
https://doi.org/10.1109/ted.2017.2679215
Autor:
Yi-He, Tsai, Chen-Han, Chou, Hui-Hsuan, Li, Wen-Kuan, Yeh, Yu-Hsien, Lin, Fu-Hsiang, Ko, Chao-Hsin, Chien
Publikováno v:
Journal of nanoscience and nanotechnology. 19(8)
A high-quality HfGeO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9845ead415e1c8fe50dde5365567e886
https://pubmed.ncbi.nlm.nih.gov/30913744
https://pubmed.ncbi.nlm.nih.gov/30913744
Autor:
Yong Cheng Yang, Yi He Tsai, Pratyay Amrit, Ting Yu Chen, Hui Ting Liu, Chao Hsin Chien, Shu Jung Tang, Chun-Liang Lin
Publikováno v:
Journal of Physics D: Applied Physics. 54:345102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe5118f5c3ab9bad9b12e7fd91bd3f1
https://doi.org/10.1088/1361-6463/ac0180
https://doi.org/10.1088/1361-6463/ac0180
Autor:
Wen-Kuan Yeh, Yi-He Tsai, Chao-Hsin Chien, Yu-Hau Jau, Chen-Han Chou, An-Shih Shih, Yu-Hsien Lin, Fu-Hsiang Ko
Publikováno v:
IEEE Electron Device Letters. 37:1379-1382
We propose a new HfGeO x interfacial layer (IL) for the high- $\kappa $ gate-stacks on p-type germanium substrate with improved thermal stability as compared with that of conventional GeO x IL. We inserted an additional HfO2 layer after the formation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb42a394e7be9d8c792d82096f34d95
https://doi.org/10.1109/led.2016.2613999
https://doi.org/10.1109/led.2016.2613999